Datasheet > GBU601-G

GBU601-G

更新时间： 2024-02-09 21:54:31

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上华 - COMCHIP		/
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3页	80K
描述
Glass Passivated Bridge Rectifiers

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中文翻译

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数据手册

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GBU601-G 数据手册

Glass Passivated Bridge Rectifiers

GBU6005-G Thru. GBU610-G

Reverse Voltage: 50 to 1000V

Forward Current: 6.0A

RoHS Device

GBU

Features

-Surge overload rating - 175 amperes peak.

-Ideal for printed circuit board.

0.437(11.1)

0.430(10.9)

0.139(3.53)

0.133(3.37)

0.874(22.2)

0.860(21.8)

0.126(3.2)*45°

Chamfer

0.161(4.1)

0.134(3.4)

0.232(5.90)

0.213(5.40)

0.752(19.1)

0.720(18.3)

Mechanical Data

0.401(10.2)

0.073(1.85)

0.057(1.45)

0.392(9.80)

-Epoxy: U/L 94-V0 rate flame retardant.

-Case: Molded plastic, GBU

-Mounting position: Any

-Weight: 3.91grams

0.100(2.54)

0.085(2.16)

0.720(18.29)

0.106(2.7)

0.091(2.3)

0.680(17.27)

0.080(2.03)

0.065(1.65)

0.047(1.2)

0.035(0.9)

0.022(0.56)

0.018(0.46)

0.210(5.3)

0.190(4.8)

0.210(5.3)

0.190(4.8)

0.210(5.3)

0.190(4.8)

Dimensions in inches and (millimeter)

Maximum ratings and electrical characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

GBU

Symbol

Parameter

Unit

6005-G

601-G

602-G

604-G

606-G

608-G

610-G

1000

700

Maximum Reverse Peak Repetitive Voltage

RRM

RMS

100

200

140

200

400

280

400

600

420

600

800

560

800

Maximum RMS Voltage

VDC

100

1000

Maximum DC Blocking Voltage

6.0

2.8

Maximum Average Forward (With heatsink Note2)

Rectified Current @Tc=100°C (without hestsink)

(AV)

Peak Forward Surage Current ,

8.3ms Single Half Sine-Wave

IFSM

175

Super Imposed On Rated Load(JEDEC Method)

Maximum Forward Voltage Drop

Per Bridge Element at 3.0A Peak

1.1

@TJ=25°C

@TJ=125°C

10.0

500

Maximum Reverse Current

At Rate DC Blocking Voltage

μA

I²T Rating for Fusing(t<8.3ms)

A²s

I²t

127

Typical Junction Capacitandce Per Element

(Note 1)

Typical Thermal Resistance

RθJC

2.2

°C/W

°C

Operating Temperature Range

-55 to +150

Storage Temperature Range

Notes:

TSTG

°C

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.

REV:A

Page 1

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Comchip Technology CO., LTD.

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