G3VM-@AR@/@DR@
■Electrical Characteristics (Ta = 25°C)
MOS FET Relays
G3VM-21AR G3VM-31AR G3VM-41AR G3VM-61AR G3VM-61AR1 G3VM-101AR G3VM-101AR1 G3VM-201AR
G3VM-21DR G3VM-31DR G3VM-41DR G3VM-61DR G3VM-61DR1 G3VM-101DR G3VM-101DR1 G3VM-201DR
Measurement
Unit
Item
Symbol
conditions
Minimum
Typical
1.18
1.33
1.48
1.5
1.64
1.8
1.18
1.33
1.48
1.5
1.64
1.8
1.18
1.33
1.48
1.5
1.64
1.8
LED forward
voltage
VF
V
IF=10 mA
Maximum
Maximum
Reverse current
IR
10
70
μA VR=5 V
Capacitance
between
CT
Typical
pF V=0, f=1 MHz
terminals
Typical
0.7
0.3
0.5
0.1
0.3
0.5
0.4
0.3
G3VM-201AR/201DR:
mA Io=0.7A
Others: Io=1A
Trigger LED
forward current
IFT
(IFC)
Maximum
3
Minimum
Typical
0.1
Release LED
forward current
IFC
(IFT)
mA IOFF=10 μA
G3VM-31AR/31DR
0.1
40
0.2
25
0.2
45
0.1
0.2
IF=5mA, t<1s, Io=4A
G3VM-61AR1/61DR1
IF=5mA, t<1s, Io=3A
G3VM-21AR/21DR/
Typical
50
80
250
110
900
Maximum
resistance with
output ON
41AR/41DR/61AR/
RON
mΩ
61DR/101AR1/101DR1:
IF=5mA, t<1s, Io=2A
G3VM-101AR/101DR:
IF=5mA, t<1s, Io=1A
G3VM-201AR/201DR:
IF=5mA, t<1s, Io=0.7A
Maximum
80
50
150
200
100
700
200
2000
0.04
Current leakage
when the relay
is open
Typical
−
0.01
450
−
0.005
−
0.01
VOFF=Load voltage
ratings
ILEAK
μA
Maximum
1
Capacitance
between
terminals
COFF Typical
300
250
200
110
pF V=0, f=1 MHz
300
Capacitance
between I/O
terminals
CI-O
Typical
0.8
pF
f=1 MHz, VS=0 V
Insulation
resistance between
I/O terminals
Minimum
Typical
1000
108
VI-O=500 VDC,
ROH≤60%
RI-O
MΩ
Typical
Maximum
Typical
1
5
0.6
3
0.8
5
0.45
2
0.8
5
0.4
2
0.13
1
Turn-ON time
Turn-OFF time
tON
I
F
=5 mA, R
L=200 Ω,
ms
VDD=20 V *
0.3
0.2
0.3
0.2
0.14
tOFF
Maximum
1
0.5
* Turn-ON and Turn-OFF Times
IF
1
4
RL
VDD
VOUT
2
3
IF
90%
VOUT
10%
tON
tOFF
3