Datasheet > G2U4407

G2U4407

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	297K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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G2U4407 数据手册

ISSUED DATE :2005/07/05

REVISED DATE :

GTM

CORPORATION

Electrical Characteristics(Tj = 25ć Unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Gate Threshold Voltage

-30

-0.01

BV_DSS

V_GS(th)

g_fs

V_GS=0, I_D=-250uA

BV_DSS

/Ϧ

V/к

Reference to 25к, I_D=-1mA

V_DS=V_GS, I_D=-250uA

V_DS=-10V, I_D=-24A

V_GS= ̈́25V

-1.0

-3.0

Forward Transconductance

̈́100

Gate-Source Leakage Current

Drain-Source Leakage Current(Tj=25к)

I_GSS

-1

-25

V_DS=-30V, V_GS=0

V_DS=-24V, V_GS=0

V_GS=-10V, I_D=-24A

V_GS=-4.5V, I_D=-16A

I_DSS

Drain-Source Leakage Current(Tj=150к)

Static Drain-Source On-Resistance²

mӨ

R_DS(ON)

Total Gate Charge²

Gate-Source Charge

Gate-Drain (“Miller”) Change

Turn-on Delay Time²

Rise Time

Q_g

Q_gs

Q_gd

T_d(on)

T_r

I_D=-24A

V_DS=-24V

V_GS=-4.5V

100

_DS=-15V

I_D=-24A

V_GS=-10V

Turn-off Delay Time

Fall Time

T_d(off)

T_f

R_G=3.3Ө

R_D=0.63Ө

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

2120 3390

C_iss

C_oss

C_rss

V_GS=0V

V_DS=-25V

f=1.0MHz

630

550

Source-Drain Diode

Parameter

Forward On Voltage²

Symbol Min.

Typ.

Max.

Unit

Test Conditions

-1.2

V_SD

I_S=-24A, V_GS=0V

Reverse Recovery Time²

T_rr

I_S=-24A, V_GS=0V

dI/dt=100A/ꢀs

Reverse Recovery Charge

Q_rr

Notes: 1. Pulse width limited by safe operating area.

2. Pulse widthЉ300us, duty cycleЉ2%.

G2U4407

Page: 2/4

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