Datasheet > FXLB252012-2R2-M

FXLB252012-2R2-M

更新时间： 2024-03-03 10:08:39

品牌	Logo	应用领域
长江微电 - CJIANG		/
页数	文件大小	规格书
7页	1997K
描述
小型化一体成型电感

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FXLB252012-2R2-M 数据手册

SZ CJIANG TECHNOLOGY CO.,LTD

Page : 3 / 8

深圳市长江微电科技有限公司

Inductance

DC Resistance

Heating Rating Current

Saturation Current

Part No.

L0 (μH)

DCR (mΩ)

Idc (A)

Isat (A)

±20 %, 100 kHz, 1V TYP.

MAX.

19.0

21.0

30.0

42.0

61.0

82.0

135.0

190.0

TYP.

6.0

6.1

5.5

4.2

3.6

3.0

2.1

1.8

MAX.

5.1

5.5

5.0

3.9

3.2

2.7

1.8

1.5

TYP.

8.5

7.3

6.3

5.4

3.6

3.3

2.8

2.4

MAX.

7.6

6.7

6.0

5.0

3.4

3.0

2.5

2.1

FXLB252012-R33-M

FXLB252012-R47-M

FXLB252012-R68-M

FXLB252012-1R0-M

FXLB252012-1R5-M

FXLB252012-2R2-M

FXLB252012-3R3-M

FXLB252012-4R7-M

0.33

0.47

0.68

1.0

14.0

17.0

25.0

35.0

53.0

68.0

110.0

160.0

1.5

2.2

3.3

4.7

Notes

1. All test data is referenced to 25 °C ambient

2. Operating temperature range - 55 °C to + 125 °C

3. Idc(A):DC current (A) that will cause an approximate ΔT of 40 °C(reference ambient temperature is 25 °C )

4. Isat(A):DC current (A) that will cause L0 to drop approximately 30 %

5. The part temperature (ambient + temp rise) should not exceed 125 °C under worst case operating conditions. Circuit

design, component placement, PWB trace size and thickness, airflow and other cooling provisions all affect the part

temperature. Part temperature should be verified in the end application.

•Dimensions-mm

• NO Marking

123 4 5 6 7

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