5秒后页面跳转
FTVFCB-1.0 PDF预览

FTVFCB-1.0

更新时间: 2024-02-02 15:58:39
品牌 Logo 应用领域
其他 - ETC 振荡器晶体振荡器
页数 文件大小 规格书
2页 106K
描述
Crystal Oscillator

FTVFCB-1.0 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.65
JESD-609代码:e0安装特点:THROUGH HOLE MOUNT
端子数量:4最大工作频率:52 MHz
最小工作频率:1 MHz标称工作频率:1 MHz
最高工作温度:70 °C最低工作温度:
封装主体材料:METAL封装等效代码:DIP4/14,.3
电源:5 V认证状态:Not Qualified
子类别:Other Oscillators最大压摆率:35 mA
标称供电电压:5 V表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

FTVFCB-1.0 数据手册

 浏览型号FTVFCB-1.0的Datasheet PDF文件第2页 
Product Data Sheet  
F-Type  
Voltage Controlled Crystal Oscillator (VCXO)  
Features  
nIndustry Common Pinout  
nCommercial or Industrial Temperature Range  
nTTL or CMOS Drive Capability  
nHermetic Package  
n5.0 V or 3.3 V Supply  
Description  
The F-Type Voltage Controlled Crystal Oscillator  
(VCXO) is used in a phase lock loop applications  
including clock recovery and frequency translation  
applications. The metal package is grounded for  
improved EMI performance.  
The FTV Voltage Controlled Crystal Oscillator  
Pin Information  
Table 1. Pin Function  
Pin  
1
7
8
14  
Symbol  
VC  
GND  
Output  
VDD  
Function  
VCXO Control Voltage  
Case Ground  
14  
1
8
7
VCXO Output  
Power Supply Voltage (3.3 or 5.0 V ±10%)  
Performance Characteristics  
Table 2. Electrical Performance  
Parameter  
Symbol  
To  
f0  
Minimum  
Typical  
Maximum  
Units  
°C  
MHz  
ppm  
V
Operating Temperature Range  
Center Frequency1  
Absolute Pull Range  
Supply Voltage2  
Supply Current  
Output Voltage Levels3  
Output High  
0 to 70, -20 To 70, or -40 to 85  
-
1
52  
+/- 20 to +/-100  
3.3 or 5.0 (+/-10%)  
0.45 mA/MHz  
VDD  
IDD  
-
35  
mA  
VOH  
VOL  
0.9 VDD  
-
V
V
Output Low  
0.1 VDD  
Transition times3  
Rise Time  
TR  
TF  
-
-
-
-
5.0  
5.0  
ns  
ns  
Fall Time  
Fanout  
Start-Up Time  
-
-
-
2
-
10  
-
0.9 VDD  
10 TTL  
TTL  
ms  
V
tsu  
VC  
Fo  
Control Voltage  
Fanout  
0.1 VDD  
-
-
Loads  
1. Other frequencies may be available, please contact factory with your special requirements.  
2. A 0.1 mF low frequency tantalum bypass capacitor in parallel with a 0.01 mF high frequency ceramic capacitor is recommended. Both should be located as close to the FTU-Type bias pin as is practical  
3. Figure 1 defines these parameters. Figure 2 illustrates the equivalent TTL load and operating conditions under which these parameters are specified and tested.  
TF  
TR  
I
DD  
650W  
VOH  
VS  
14  
1
+
-
8
VDD  
7
VOL  
I
C
15pF  
1.83k  
W
On Time  
+
-
V
0V  
C
Period  
Figure 1. Output Waveform  
Figure 2. Output Test Conditions (25±5°C)  
Vectron International · 166 Glover Avenue, Norwalk, CT 06856 · Tel: 1-88-VECTRON-1· http://www.vectron.com  
1

与FTVFCB-1.0相关器件

型号 品牌 描述 获取价格 数据表
FTVFCB-1.000MHZ MICROSEMI Quartz Crystal,

获取价格

FTVFCB-52.0 ETC Crystal Oscillator

获取价格

FTVFCB-52.000MHZ MICROSEMI 暂无描述

获取价格

FTVFCJ VECTRON Voltage Controlled Crystal Oscillator (VCXO)

获取价格

FTVFCJ-1.000MHZ MICROSEMI Quartz Crystal,

获取价格

FTVFCJ-52.000MHZ MICROSEMI Quartz Crystal,

获取价格