Datasheet > FT27C010L

FT27C010L

更新时间： 2024-01-11 19:52:39

品牌	Logo	应用领域
福思力 - FORCE		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
11页	809K
描述
1-Megabit (128K x 8) UVEPROM

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中文翻译

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数据手册

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FT27C010L 数据手册

Features

• Fast Read Access Time - 45 ns

• Low-Power CMOS Operation

– 100 µA max. Standby

– 25 mA max. Active at 5 MHz (FT27C010L)

– 35 mA max. Active at 5 MHz (FT27C010)

• JEDEC Standard Packages

– 32-Lead CDIL/LCC/JLCC +Custom Ceramic packages

• 5V ± 10% Supply

• High Reliability CMOS Technology

1-Megabit

(128K x 8)

UVEPROM

– 2000V ESD Protection

– 200 mA Latchup Immunity

• Programming Algorithm - 100 µs/byte (typical)

• CMOS and TTL Compatible Inputs and Outputs

• Integrated Product Identification Code

• Commercial, Industrial and Automotive Temperature Ranges. MILITARY-Contact sales

FT27C010(L)

Description

The FT27C010(L) is a low-power, high-performance 1,048,576-bit UV erase/program-

mable read only memory (UVEPROM) organised as 128K by 8 bits. They require

only one 5V power supply in normal read mode operation. Any byte can be accessed

in less than 45 ns, eliminating the need for speed reducing WAIT states on high-per-

formance microprocessor systems.

Two power versions are offered. In read mode, the FT27C010 typically consumes 25

mA while the FT27C010L requires only 8 mA. Standby mode supply current for both

parts is typically less than 10 µA.

Pin Configurations

Pin Name

A0 - A16

O0 - O7

Function

Addresses

Outputs

Chip Enable

Output Enable

Program Strobe

No Connect

1M bit EPROM

PGM

CLCC/JLCC Top View

CDIL Top View

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 O7

VPP

A16

A15

A12

32 VCC

31 PGM

30 NC

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 O7

20 O6

19 O5

18 O4

17 O3

A2 10

A1 11

A0 12

O0 13

A2 10

A1 11

A0 12

O0 13

O1 14

O2 15

GND 16

2006

1/11

Rev 1

12 3 4 5 6 7...11

中文翻译

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