生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 关态电压最小值的临界上升速率: | 200 V/us |
最大直流栅极触发电流: | 350 mA | 最大直流栅极触发电压: | 3 V |
最大维持电流: | 1000 mA | 最大漏电流: | 120 mA |
通态非重复峰值电流: | 30000 A | 最大通态电流: | 1500000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
断态重复峰值电压: | 800 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FT1500EX20 | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 1500000mA I(T), 1000V V(DRM) |
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FT1500EX-24 | MITSUBISHI |
获取价格 |
Silicon Controlled Rectifier, 2355A I(T)RMS, 1500000mA I(T), 1200V V(DRM), 1200V V(RRM), F |
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FT1500EY24 | POWEREX |
获取价格 |
Silicon Controlled Rectifier, 1500000mA I(T), 1200V V(DRM) |
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FT1500EY-24 | MITSUBISHI |
获取价格 |
Silicon Controlled Rectifier, 2355A I(T)RMS, 1500000mA I(T), 1200V V(DRM), 1200V V(RRM), F |
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FT1500GV-80 | MITSUBISHI |
获取价格 |
Silicon Controlled Rectifier, 2355A I(T)RMS, 2300000mA I(T), 4000V V(DRM), 4000V V(RRM), F |
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FT150R12KE3_B4 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-39 |
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FT150R12KE3-B4 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES |
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FT150R12KE3B5BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-18 |
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FT150R12KE3G_B4 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-39 |
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FT1513 | FARADAY |
获取价格 |
SDI TRANSFORMER |
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