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FS14KM-9A

更新时间: 2024-01-13 09:37:05
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
4页 67K
描述
FS14KM-9A

FS14KM-9A 技术参数

生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.38
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:450 V
最大漏极电流 (ID):14 A最大漏源导通电阻:0.52 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):42 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FS14KM-9A 数据手册

 浏览型号FS14KM-9A的Datasheet PDF文件第1页浏览型号FS14KM-9A的Datasheet PDF文件第3页浏览型号FS14KM-9A的Datasheet PDF文件第4页 
MITSUBISHI Nch POWER MOSFET  
FS14KM-9A  
HIGH-SPEED SWITCHING USE  
ELECTRICAL CHARACTERISTICS (Tch = 25°C)  
Symbol Parameter  
Limits  
Unit  
Test conditions  
Min.  
450  
30  
Typ.  
Max.  
ID = 1mA, VGS = 0V  
V
V
(BR) DSS Drain-source breakdown voltage  
(BR) GSS Gate-source breakdown voltage  
V
V
IGS = 100µA, VDS = 0V  
VGS = 25V, VDS = 0V  
IGSS  
Gate-source leakage current  
10  
µA  
mA  
V
IDSS  
Drain-source leakage current VDS = 450V, VGS = 0V  
1
ID = 1mA, VDS = 10V  
ID = 7A, VGS = 10V  
VGS (th)  
rDS (ON)  
VDS (ON)  
yfs  
Ciss  
Gate-source threshold voltage  
Drain-source on-state resistance  
2.5  
3.0  
0.41  
2.87  
12.0  
1500  
160  
35  
3.5  
0.52  
3.64  
V
Drain-source on-state voltage ID = 7A, VGS = 10V  
ID = 7A, VDS = 10V  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
7.2  
S
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 25V, VGS = 0V, f = 1MHz  
Coss  
Crss  
td (on)  
tr  
25  
40  
VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω  
td (off)  
tf  
Turn-off delay time  
Fall time  
190  
50  
VSD  
Source-drain voltage  
Thermal resistance  
IS = 7A, VGS = 0V  
Channel to case  
1.5  
2.0  
3.57  
Rth (ch-c)  
°C/W  
PERFORMANCE CURVES  
POWER DISSIPATION DERATING CURVE  
MAXIMUM SAFE OPERATING AREA  
50  
40  
30  
20  
10  
0
5
3
2
tw =  
10µs  
101  
7
5
100µs  
1ms  
3
2
10ms  
100  
7
5
3
2
DC  
10–1  
7
5
T
C
= 25°C  
Single Pulse  
3
0
50  
100  
150  
200  
2
3
5 7101  
2
3
5 7102  
2
3
5 7  
CASE TEMPERATURE  
TC  
(°C)  
DRAIN-SOURCE VOLTAGE VDS (V)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
OUTPUT CHARACTERISTICS  
(TYPICAL)  
50  
40  
30  
20  
10  
0
20  
16  
12  
8
T
C
= 25°C  
V
GS = 20V,10V,8V,6V  
Pulse Test  
TC = 25°C  
Pulse Test  
V
GS = 20V,10V,8V  
6V  
5V  
5V  
= 35W  
40  
DS (V)  
4
PD = 35W  
P
D
0
0
10  
20  
30  
50  
0
4
8
12  
16  
20  
DRAIN-SOURCE VOLTAGE  
V
DRAIN-SOURCE VOLTAGE  
VDS (V)  
Sep. 2001  

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