MITSUBISHI Nch POWER MOSFET
FS14KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
600
30
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
V
(BR) DSS Drain-source breakdown voltage
(BR) GSS Gate-source breakdown voltage
V
V
IGS = 100µA, VDS = 0V
—
—
VGS = 25V, VDS = 0V
IGSS
Gate-source leakage current
—
10
µA
mA
V
IDSS
Drain-source leakage current VDS = 600V, VGS = 0V
—
—
1
ID = 1mA, VDS = 10V
ID = 7A, VGS = 10V
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Gate-source threshold voltage
Drain-source on-state resistance
2.5
—
3.0
0.46
3.22
15.0
2350
210
50
3.5
0.60
4.20
—
Ω
V
Drain-source on-state voltage ID = 7A, VGS = 10V
—
ID = 7A, VDS = 10V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
9.0
—
S
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25V, VGS = 0V, f = 1MHz
Coss
—
—
Crss
—
—
td (on)
tr
—
35
—
—
50
—
VDD = 200V, ID = 7A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
—
310
70
—
—
—
VSD
Source-drain voltage
Thermal resistance
IS = 7A, VGS = 0V
Channel to case
—
1.5
—
2.0
3.13
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
7
5
3
2
50
40
30
20
10
0
tw =
10µs
101
7
5
3
2
100µs
1ms
100
7
5
3
2
10
ms
T
C
= 25°C
Single Pulse
10–1
7
5
DC
3
2
0
50
100
150
200
2
3
5
7
101
2
3
5
7
102
2
3
5
7
CASE TEMPERATURE
TC
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
40
30
20
10
0
20
16
12
8
T
C
= 25°C
Pulse Test
V
GS = 20V,10V,8V,6V
V
GS = 20V,10V,8V
5V
6V
T
C
= 25°C
Pulse Test
5V
4
PD = 40W
P
D
= 40W
40
DS (V)
0
0
10
20
30
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE
V
DRAIN-SOURCE VOLTAGE
VDS (V)
Sep. 2001