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FOD3184SD PDF预览

FOD3184SD

更新时间: 2024-01-31 11:19:16
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 输出元件光电
页数 文件大小 规格书
23页 754K
描述
Logic IC Output Optocoupler, 1-Element, 5000V Isolation, LEAD FREE, SMT, DIP-8

FOD3184SD 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DIP
包装说明:LEAD FREE, SMT, DIP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:5.7
其他特性:UL RECOGNIZED配置:SINGLE
最大正向电流:0.016 A最大正向电压:1.8 V
最大绝缘电压:5000 VJESD-609代码:e3
安装特点:SURFACE MOUNT元件数量:1
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:LOGIC IC OUTPUT OPTOCOUPLER最大功率耗散:0.25 W
子类别:Optocoupler - Transistor Outputs最小供电电压:15 V
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

FOD3184SD 数据手册

 浏览型号FOD3184SD的Datasheet PDF文件第2页浏览型号FOD3184SD的Datasheet PDF文件第3页浏览型号FOD3184SD的Datasheet PDF文件第4页浏览型号FOD3184SD的Datasheet PDF文件第5页浏览型号FOD3184SD的Datasheet PDF文件第6页浏览型号FOD3184SD的Datasheet PDF文件第7页 
February 2011  
FOD3184  
3A Output Current, High Speed MOSFET/IGBT  
Gate Driver Optocoupler  
Features  
Applications  
Plasma Display Panel  
High noise immunity characterized by 50kV/µs (Typ.)  
common mode rejection @ V  
= 2,000V  
High performance DC/DC convertor  
CM  
Guaranteed operating temperature range of  
-40°C to +100°C  
3A peak output current for medium power  
MOSFET/IGBT  
High performance switch mode power supply  
High performance uninterruptible power supply  
Isolated Power MOSFET/IGBT gate drive  
Fast switching speed  
Description  
– 210ns max. propagation delay  
– 65ns max pulse width distortion  
Fast output rise/fall time  
– Offers lower dynamic power dissipation  
250kHz maximum switching speed  
The FOD3184 is a 3A Output Current, High Speed  
MOSFET/IGBT Gate Drive Optocoupler. It consists of a  
aluminium gallium arsenide (AlGaAs) light emitting diode  
optically coupled to a CMOS detector with PMOS and  
NMOS output power transistors integrated circuit power  
stage. It is ideally suited for high frequency driving of  
power MOSFETS/IGBT used in Plasma Display Panels  
(PDPs), motor control inverter applications and high  
performance DC/DC converters.  
Wide V operating range from 15V to 30V  
DD  
Use of P-Channel MOSFETs at output stage  
enables output voltage swing close to the supply rail  
(rail-to-rail output)  
Under voltage lockout protection (UVLO) with  
hysteresis – optimized for driving IGBTs  
Safety and regulatory approvals  
The device is packaged in an 8-pin dual in-line housing  
compatible with 260°C reflow processes for lead free  
solder compliance.  
– UL1577, 5,000 VAC  
for 1 min.  
RMS  
– DIN EN/IEC 60747-5-2, 1,414 peak working  
insulation voltage  
• Minimum creepage distance of 8.0mm  
• Minimum clearance distance of 8mm to 16mm  
(option TV or TSV)  
• Minimum insulation thickness of 0.5mm  
Functional Block Diagram  
Package Outlines  
1
2
3
4
8
7
NC  
ANODE  
CATHODE  
NC  
V
V
DD  
8
8
O2  
O1  
SS  
1
1
6 V  
5 V  
8
8
1
Note:  
1
A 0.1µF bypass capacitor must be connected between pins 5 and 8.  
©2005 Fairchild Semiconductor Corporation  
FOD3184 Rev. 1.0.4  
www.fairchildsemi.com  

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