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FOD3125SD

更新时间： 2024-11-27 02:50:35
品牌 Logo 应用领域
安森美 - ONSEMI 栅
页数 文件大小 规格书
18页 301K
描述
High Temperature, 2.5 A Output Current, Gate Drive Optocoupler

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中文翻译

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FOD3125SD 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：compliantFactory Lead Time：28 weeks 6 days
风险等级：5.75JESD-609代码：e4
端子面层：Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)Base Number Matches：1

FOD3125SD 数据手册

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High Temperature, 2.5 A  
Output Current, Gate Drive  
Optocoupler  
FOD3125  
Description  
The FOD3125 is a 2.5 A Output Current Gate Drive Optocoupler,  
capable of driving most medium IGBTs or MOSFETs across extended  
industrial temperature range, −40°C to 125°C. It is ideally suited for  
fast switching driving of power IGBTs and MOSFETs used in motor  
control inverter applications, and high performance power system.  
It utilizes ON Semiconductor patented coplanar packaging  
www.onsemi.com  
8
8
®
technology, Optoplanar , and optimized IC design to achieve high  
1
1
noise immunity, characterized by high common mode rejection.  
It consists of a gallium aluminum arsenide (AlGaAs) light emitting  
diode optically coupled to an integrated circuit with a high−speed  
driver for push−pull MOSFET output stage.  
PDIP8 GW  
CASE 709AD  
PDIP8 GW  
CASE 709AC  
Features  
8
8
• Extended Industrial Temperate Range, −40°C to 125°C  
• High Noise Immunity characterized by 35 kV/ms minimum Common  
Mode Rejection  
1
1
PDIP8 6.6x3.81, 2.54P PDIP8 9.655x6.6, 2.54P  
CASE 646BW CASE 646CQ  
• 2.5 A Peak Output Current Driving Capability for Most 1200 V/  
20 A IGBT  
• Use of P−channel MOSFETs at Output Stage Enables Output Voltage  
Swing close to the Supply Rail  
FUNCTIONAL BLOCK DIAGRAM  
• Wide Supply Voltage Range from 15 V to 30 V  
• Fast Switching Speed  
1
2
3
4
8
NC  
ANODE  
CATHODE  
NC  
V
V
V
V
DD  
♦ 400 ns maximum Propagation Delay  
♦ 100 ns maximum Pulse Width Distortion  
• Under Voltage LockOut (UVLO) with Hysteresis  
7
6
5
O2  
O1  
SS  
• Safety and Regulatory Approvals  
♦ UL1577, 5000 V  
for 1 minute  
RMS  
♦ DIN EN/IEC60747−5−5 (pending approval)  
• >8.0 mm Clearance and Creepage Distance (Option ‘T’ or ‘TS’)  
• 1,414 V Peak Working Insulation Voltage (VIORM)  
• This is a Pb−Free Device  
Applications  
Note: A 0.1 mF bypass capacitor must be  
• Industrial Inverter  
connected between pins 5 and 8.  
• Uninterruptible Power Supply  
• Induction Heating  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 13 of this data sheet.  
• Isolated IGBT/Power MOSFET Gate Drive  
Table 1. TRUTH TABLE  
LED  
Off  
V
O
V
DD  
– V “Positive Going” (Turn−on)  
V
DD  
– V “Negative Going” (Turn−off)  
SS  
SS  
0 V to 30 V  
0 V to 11 V  
11 V to 14 V  
14 V to 30 V  
0 V to 30 V  
0 V to 9.7 V  
Low  
Low  
On  
On  
On  
9.7 V to 12.7 V  
12.7 V to 30 V  
Transition  
High  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
March, 2020 − Rev. 2  
FOD3125/D  
1234567...18

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