是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最大集电极电流 (IC): | 0.1 A |
最小直流电流增益 (hFE): | 35 | 元件数量: | 1 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.2 W |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FN4L4L | NEC |
获取价格 |
RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
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FN4L4L-A | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, |
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FN4L4L-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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FN4L4L-L | RENESAS |
获取价格 |
FN4L4L-L |
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FN4L4L-T2B-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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FN4L4M | NEC |
获取价格 |
RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
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FN4L4M-A | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, |
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FN4L4M-T2B | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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FN4L4M-T2B-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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FN4L4M-T2B-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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