是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SC-59 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.24 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 0.47 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FN4L4M-T2B | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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FN4L4M-T2B-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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FN4L4M-T2B-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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FN4L4Z | NEC |
获取价格 |
RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
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FN4L4Z-A | RENESAS |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, |
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FN4L4Z-L | RENESAS |
获取价格 |
FN4L4Z-L |
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FN4L4Z-T2B | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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FN4L4Z-T2B-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59 |
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FN5.5 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 1MA I(DSS) | CHIP |
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FN5000109 | ETC |
获取价格 |
3.3V CMOS Low Jitter XO |
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