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FME6G20US60 PDF预览

FME6G20US60

更新时间: 2024-02-22 17:31:14
品牌 Logo 应用领域
其他 - ETC 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
9页 683K
描述
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C)

FME6G20US60 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X17
针数:17Reach Compliance Code:unknown
风险等级:5.84外壳连接:ISOLATED
最大集电极电流 (IC):20 A集电极-发射极最大电压:600 V
配置:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X17元件数量:6
端子数量:17最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):56 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):363 ns标称接通时间 (ton):81 ns
VCEsat-Max:2.8 VBase Number Matches:1

FME6G20US60 数据手册

 浏览型号FME6G20US60的Datasheet PDF文件第2页浏览型号FME6G20US60的Datasheet PDF文件第3页浏览型号FME6G20US60的Datasheet PDF文件第4页浏览型号FME6G20US60的Datasheet PDF文件第5页浏览型号FME6G20US60的Datasheet PDF文件第6页浏览型号FME6G20US60的Datasheet PDF文件第7页 
September 2000  
IGBT  
FME6G20US60  
Econo Type Module  
General Description  
Fairchild IGBT Power Module provides low conduction and  
switching losses as well as short circuit ruggedness. It’s  
designed for the applications such as motor control, UPS  
and general inverters where short-circuit ruggedness is  
required.  
Features  
Short Circuit rated 10us @ T = 100°C, V = 15V  
C
GE  
High Speed Switching  
Low Saturation Voltage : V  
High Input Impedance  
= 2.2 V @ I = 20A  
CE(sat)  
C
Package Code : 17PM-CA  
Fast & Soft Anti-Parallel FWD  
Application  
1
2
5
6
9
AC & DC Motor Controls  
General Purpose Inverters  
Robotics  
Servo Controls  
UPS  
10  
U
V
W
3
4
7
8
11  
12  
Internal Circuit Diagram  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
FME6G20US60  
Units  
V
V
Collector-Emitter Voltage  
600  
V
V
CES  
GES  
Gate-Emitter Voltage  
± 20  
I
I
I
I
Collector Current  
@ T  
=
25°C  
20  
A
C
C
Pulsed Collector Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Short Circuit Withstand Time  
M a x i m u m P o w e r D i s s i p a t i o n  
Operating Junction Temperature  
Storage Temperature Range  
Isolation Voltage  
40  
A
CM (1)  
F
@ T = 100°C  
20  
40  
A
C
A
FM  
T
@ T = 100°C  
10  
us  
W
°C  
°C  
V
SC  
C
P
@ T  
=
C
25°C  
56  
D
J
T
-40 to +150  
-40 to +125  
2500  
T
stg  
V
@ AC 1minute  
iso  
Mounting  
Torque  
Mounting Screw : M5  
2.0  
N.m  
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
©2000 Fairchild Semiconductor International  
FME6G20US60 Rev. A  

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