5秒后页面跳转
FM25P16-G PDF预览

FM25P16-G

更新时间: 2024-01-06 14:56:32
品牌 Logo 应用领域
铁电 - RAMTRON 内存集成电路
页数 文件大小 规格书
14页 205K
描述
Memory Circuit

FM25P16-G 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.84内存集成电路类型:MEMORY CIRCUIT
Base Number Matches:1

FM25P16-G 数据手册

 浏览型号FM25P16-G的Datasheet PDF文件第2页浏览型号FM25P16-G的Datasheet PDF文件第3页浏览型号FM25P16-G的Datasheet PDF文件第4页浏览型号FM25P16-G的Datasheet PDF文件第5页浏览型号FM25P16-G的Datasheet PDF文件第6页浏览型号FM25P16-G的Datasheet PDF文件第7页 
Preliminary  
FM25P16  
16Kb Ultra Low Power Serial SPI F-RAM  
Features  
Low Power Operation  
16K bit Ferroelectric Nonvolatile RAM  
1.8 - 3.6V Wide Operating Voltage  
3.2 μA (typ.) Active Current @ 100 kHz  
Organized as 2044 x 8 bits  
Unlimited Read/Write Cycles  
10 Year Data Retention  
NoDelay™ Writes  
Member of a New Family of Low Energy  
Memory Devices  
Applications  
Solar Powered  
Small Capacity Coin Cells  
Energy Harvesting  
Serial Peripheral Interface - SPI  
Industry Standard Configuration  
Up to 1 MHz Frequency  
Direct Hardware Replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Industrial Temperature -40° C to +85° C  
“Green”/RoHS 8-pin SOIC Package  
DESCRIPTION  
PIN CONFIGURATION  
The FM25P16 is a 16-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
2
3
4
8
CS  
SO  
VDD  
HOLD  
SCK  
SI  
7
6
5
WP  
VSS  
F-RAM technology uses less energy to perform  
memory writes and completes those writes faster.  
The FM25P16 is a member of a new family of low  
energy memory products that take advantage of these  
features to produce a nonvolatile memory that  
requires very little energy to operate.  
Pin Name  
/CS  
/WP  
/HOLD  
SCK  
SI  
SO  
VDD  
VSS  
Function  
Chip Select  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
Unlike serial EEPROMs, the FM25P16 performs  
write operations at bus speed. Data is written to the  
memory array immediately after each byte has been  
transferred to the device. The next bus cycle may  
commence without the need for data polling. The  
product offers virtually unlimited write endurance,  
orders of magnitude more endurance than EEPROM.  
Ordering Information  
FM25P16-G  
“Green”/RoHS 8-pin SOIC  
These capabilities make the FM25P16 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data logging  
where the number of write cycles may be critical, to  
applications where the long write time of EEPROM  
would otherwise cause data loss.  
The FM25P16 provides substantial benefits to users  
of serial EEPROM as  
a
hardware drop-in  
replacement by using a standard SPI interface.  
Device specifications are guaranteed over an  
industrial temperature range of -40°C to +85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.0  
Dec. 2011  
Page 1 of 14  

与FM25P16-G相关器件

型号 品牌 描述 获取价格 数据表
FM25P1G2 MOLEX D Subminiature Connector, 25 Contact(s), Male, Solder Terminal, Plug,

获取价格

FM25P1RG1 MOLEX D Subminiature Connector, 25 Contact(s), Male, Solder Terminal, Plug,

获取价格

FM25P1RG2 MOLEX 暂无描述

获取价格

FM25P1RG3 MOLEX D Subminiature Connector, 25 Contact(s), Male, Solder Terminal, Plug,

获取价格

FM25P1SG1 MOLEX D Subminiature Connector, 25 Contact(s), Male, Solder Terminal, Plug,

获取价格

FM25P1SG2 MOLEX D Subminiature Connector, 25 Contact(s), Male, Solder Terminal, Plug,

获取价格