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FID35-06C PDF预览

FID35-06C

更新时间： 2024-01-14 01:31:05
品牌 Logo 应用领域
IXYS 晶体晶体管功率控制双极性晶体管栅
页数 文件大小 规格书
2页 48K
描述
Fast IGBT Chopper in ISOPLUS i4-PACTM

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中文翻译

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FID35-06C 技术参数

是否无铅：不含铅生命周期：Transferred
零件包装代码：ISOPLUS包装说明：IN-LINE, R-PSIP-T5
针数：5Reach Compliance Code：unknown
风险等级：5.73Is Samacsys：N
其他特性：HIGH RELIABILITY外壳连接：ISOLATED
最大集电极电流 (IC)：38 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值：5 V
门极-发射极最大电压：20 VJESD-30 代码：R-PSIP-T5
JESD-609代码：e1元件数量：1
端子数量：5最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：125 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：NO端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：390 ns
标称接通时间 (ton)：80 nsBase Number Matches：1

FID35-06C 数据手册

 浏览型号FID35-06C的Datasheet PDF文件第2页 
FID 35-06C  
IC25  
VCES  
= 38 A  
= 600 V  
Fast IGBT Chopper  
in ISOPLUS i4-PACTM  
VCE(sat)typ. = 1.9 V  
3
4
Preliminary data  
1
1
2
5
Features  
IGBT  
●
NPT IGBT technology  
Symbol  
VCES  
Conditions  
Maximum Ratings  
- low switching losses for high  
frequency operation  
- no latch up  
TVJ = 25°C to 150°C  
600  
20  
V
V
VGES  
- positive temperature coefficient for  
easy paralleling  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
38  
24  
A
A
HiPerDynTM FRED  
●
- consisting of series connected  
diodes  
ICM  
VCEK  
VGE = 15 V; RG = 10 Ω; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
110  
VCES  
A
µs  
W
- enhanced dynamic behaviour for  
high frequency operation  
ISOPLUS i4-PACTM package  
tSC  
(SCSOA)  
VCE = VCES; VGE = 15 V; RG = 10 Ω; TVJ = 125°C  
non-repetitive  
10  
●
- isolated back surface  
- low coupling capacity between pins  
and heatsink  
Ptot  
TC = 25°C  
125  
- enlarged creepage towards heatsink  
- application friendly pinout  
- low inductive current path  
- high reliability  
- industry standard outline  
- UL registered E 72873  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VCE(sat)  
IC = 25 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
1.9  
2.2  
2.4  
V
V
Applications  
VGE(th)  
ICES  
IC = 0.7 mA; VGE = VCE  
3
5
V
●
boost chopper for power factor  
correction  
supply of high frequency transformer  
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.04 mA  
mA  
●
1
- switched mode power supplies  
- welding converters  
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
30  
50  
320  
70  
1.1  
0.6  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 300 V; IC = 25 A  
VGE = 15 V; RG = 10 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600V; VGE = 15 V; IC = 15 A  
1.6  
140  
nF  
nC  
RthJC  
RthJH  
1.0 K/W  
K/W  
(with heat transfer paste)  
2.0  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
12

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