Datasheet > FESF16MTR

FESF16MTR

更新时间： 2024-01-25 06:46:29

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	246K
描述
16.0 Ampere Insulated Package Negative Ultra Fast Recovery Rectifier Diode

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中文翻译

获取价格

数据手册

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FESF16MTR 数据手册

FESF16ATR thru FESF16NTR

Pb Free Plating Product

FESF16ATR thru FESF16NTR

16.0 Ampere Insulated Package Negative Ultra Fast Recovery Rectifier Diode

ITO-220AC(TO-220F-2L)

Unit:inch(mm)

Features

.419(10.66)

.387(9.85)

※ ThinkiSemi latest&matured process FRD/FRED

※ Low forward voltage drop

※ High current capability

.196(5.00)

.163(4.16)

.167(3.73)

.122(3.10)

.118(3.00)

.079(2.00)

※

Low reverse leakage current

※ High surge current capability

Application

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

※

Case:ITO-220AC(TO-220F-2L) fully plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

.1(2.54)

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

Internal Configuration

※ Weight: 2.0 gram approximately

Negative

Positive

Suffix "T"

Suffix "TR"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

FESF16ATR

FESF16ETR

FESF16FTR

FESF16GTR

FESF16HTR

FESF16ITR

FESF16JTR

FESF16KTR

FESF16LTR

FESF16BTR

FESF16CTR

FESF16DTR

PARAMETER

SYMBOL

FESF16MTR

FESF16NTR

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1200

840

Maximum DC Blocking Voltage

1000

1200

Maximum Average Forward Rectified

Current TC=125℃

16.0

IF(AV)

IFSM

(Total Device 16.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)(Per Diode/Per Leg)

300

Maximum Instantaneous Forward Voltage

@16.0A(Per Diode/Per Leg)

(Typical)

1.50-1.70

0.85-0.95

1.00-1.25

1.25-1.50

Maximum DC Reverse Current @TJ=25℃

At Rated DC Blocking Voltage @TJ=125℃

1.0

100

μA

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

25-50

50-75

Trr

160

3.0

RθJC

℃/W

Operating Junction and Storage

Temperature Range

-55 to +175

TJ,TSTG

℃

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

Page 1/2

Rev.10T

http://www.thinkisemi.com.tw/

中文翻译

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与FESF16MTR相关器件

型号	品牌	获取价格	描述	数据表
FESF16NT	THINKISEMI	获取价格	16.0 Ampere Insulated Package Positive Ultra Fast Recovery Rectifier Diode
FESF16NTR	THINKISEMI	获取价格	16.0 Ampere Insulated Package Negative Ultra Fast Recovery Rectifier Diode
FESF389.999MHZ	CALIBER	获取价格	Series - 3Rd Overtone Quartz Crystal, 89.999MHz Nom,
FESF8	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
FESF8AT	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
FESF8AT/45	VISHAY	获取价格	Rectifier Diode, 1 Element, 8A, 50V V(RRM)
FESF8AT-G	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC
FESF8ATHE3/45	VISHAY	获取价格	DIODE GEN PURP 50V 8A ITO220AC
FESF8BT	VISHAY	获取价格	FAST EFFICIENT PLASTIC RECTIFIER
FESF8BT-G	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTI

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