Datasheet > FAN5910UCX

FAN5910UCX

更新时间： 2023-09-03 20:40:22

品牌	Logo	应用领域
安森美 - ONSEMI		GSM
页数	文件大小	规格书
16页	533K
描述
Multi-Mode Buck Converter with LDO Assist for GSM / EDGE, 3G/3.5G and 4G PAs

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数据手册

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FAN5910UCX 数据手册

FAN5910

50μs

DC−DC EN

MODE

DC−DC

VCON

3.4V

2.5 x V^CON

7.3

μs

0.7V

DC−DC V^OUT

PA TX EN

Continuous RF

ANTENNA

Figure 28. Timing Diagram for WCDMA Transmitters

Inductor Selection

A 6.8 pF capacitor may be added in parallel with C

reduce the capacitor’s parasitic inductance.

OUT

The FAN5910 operates at 2.9 MHz switching frequency,

allowing 1.0 mH or 1.5 mH inductors to be used in designs.

For applications requiring the smallest possible PCB area,

use a 1.0 mH 2012 inductor or a 1.0 mH 2016 inductor for

optimum efficiency performance.

Table 6. RECOMMENDED CAPACITOR VALUES

Capacitor

Description

10 mF, 20%, X5R, 10 V, 0402 (1005 metric)

Samsung CL05A106MP5NUNC

Table 5. RECOMMENDED INDUCTORS

4.7 mF, 20%, X5R, 10 V, 0402 (1005 metric)

Murata GRM155R60J475ME47D

OUT

Inductor

Description

1.5 mH 20%, 2.2 A, 2016 Case Size

Murata DFE201610C−1R5M

PCB Layout and Component Placement

• The key point in the placement is the power ground

(PGND) connection shared between the FAN5910,

CIN, and COUT. This minimizes the parasitic

inductance of the switching loop paths.

• Place the inductor away from the feedback pins to

prevent unpredictable loop behavior.

• Ensure the traces are wide enough to handle the

maximum current value, especially in Bypass Mode.

• Ensure the vias are able to handle the current density.

Use filled vias if available.

1.0 mH 20%, 2.2 A, 2016 Case Size

Toko: DFE201610R−H−1R0M

Capacitor Selection

The minimum required output capacitor C

should be

OUT

one (1) 4.7 mF, 6.3 V, X5R with an ESR of 10 mW or lower

and an ESL of 0.3 nH or lower in parallel after inductor L1.

Larger case sizes result in increased loop parasitic

inductance and higher noise. One 10 mF capacitor should be

used as a decoupling capacitor at the GSM/EDGE PA V

pin and another 10 mF capacitor should be placed at V pin

of the 3G/4G PA.

www.onsemi.com

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