Electrical Specifications
VIN = 2.7V to 4.8V and TA = -40°C to +85°C unless otherwise noted. Typical values are at TA = 25°C and VIN = 3.6V.
Parameter
Conditions
Min.
Typ.
Max. Units
Symbol
Power Supplies
IQ
Quiescent Current
EN = VIN, Device Not Switching
EN = GND, VIN = 3.6V
1
mA
μA
V
ISD
Shutdown Supply Current
0.3
2.40
2.15
250
1.0
VIN Rising
2.30
2.00
2.50
2.25
VUVLO
Under-Voltage Lockout
VIN Falling
V
VUVHYST Under-Voltage Lockout Hysteresis
mV
EN: Enable Pin
VIH
VIL
HIGH-Level Input Voltage
LOW-Level Input Voltage
EN Pull-Down Resistance
EN Low to Shutdown Delay
1.2
V
V
0.4
400
80
REN
tSD
200
20
300
kΩ
ms
From Falling Edge of EN
VFB = 500mV
Feedback and Reference
VFB
IFB
Feedback Voltage
480
500
0.1
520
1.0
mV
Feedback Input Current
μA
Power Outputs
V
IN = 3.6V, VOUT = 10V, ISW = 100mA
600
850
2.0
2.8
RDS(ON)_Q1 Boost Switch On-Resistance
mΩ
VIN = 2.7V, VOUT = 10V, ISW = 100mA
RDS(ON)_Q2 Synchronous Rectifier On-Resistance VOUT = 10V, ISW = 100mA
Ω
Ω
RDS(ON)_Q3 Load Switch On-Resistance
ISW(OFF) SW Node Leakage(2)
VOUT = 10V, ILED = 10mA
EN = 0, VIN = VSW = VOUT = 5.5V,
VLED = 0
0.1
1.0
μA
ILIM-PK
Oscillator
fSW
Boost Switch Peak Current Limit
VIN = 3.6V
325
1.0
400
475
mA
Boost Regulator Switching Frequency
1.2
1.4
100
20.0
MHz
%
PWM Dimming
DPWM
PWM Duty Cycle(3)
PWM Dimming Frequency ≤1kHz
1.0
Output and Protection
VOVP
Boost Output Over-Voltage Protection
18.0
19.0
0.8
V
V
VOVPHYST OVP Hysteresis
V
OUT Falling
VIN – 1.5
VIN – 1.3
V
VTHSC
VLED Short-Circuit Detection Threshold
VOUT Rising
V
DMAX
DMIN
Maximum Boost Duty Cycle(3)
Minimum Boost Duty Cycle(3)
Thermal Shutdown
85
%
%
°C
°C
20
TSD
150
25
THYS
Thermal Shutdown Hysteresis
Notes:
2. SW leakage current includes the leakage current of three internal switches; SW to GND, VOUT to VLED, and SW to VOUT
3. Guaranteed by design.
.
© 2010 Fairchild Semiconductor Corporation
FAN5340 • Rev. 1.0.1
www.fairchildsemi.com
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