SFF130/3 & SFF130/66
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Symbol
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 μA)
Temperature Coefficient of Breakdown Voltage
BVDSS
Volts
100
––
––
––
––
ΔBVDSS
ΔTj
mV/ ºC
130
Drain to Source On State Resistance
(VGS=10 V )
Gate Threshold Voltage
ID=9A
ID=14A
0.13
0.14
0.18
0.21
RDS(on)
VGS(th)
gfs
––
Ω
V
2.0
4.6
2.8
7
4.0
––
(VDS=VGS, ID=250 μA )
Forward Transconductance
(VDS>ID(on) X RDS(on) Max, IDS= 9A)
Zero Gate Voltage Drain Current
mho
(VDS=80% max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=125ºC)
––
––
––
––
25
250
μA
nA
nC
IDSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
––
––
––
––
+100
-100
IGSS
At rated VGS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
VGS=10 Volts
50% rated VDS
Rated ID
12
1.5
5
17
3.7
7.0
35
10
20
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
VDD=50%
Rated VDS
50% rated ID
RG= 7.5Ω
td(on)
tr
td(off)
tf
––
––
––
––
9.5
42
22
25
35
80
60
45
nsec
V
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
VSD
––
1
1.5
TJ=25ºC
IF=10A
Di/dt=100A/μsec
nsec
μC
Diode Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
––
––
120
0.58
300
3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS=0 Volts
VDS=25 Volts
f=1 MHz
––
––
––
650
250
44
––
––
––
pF
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
PIN ASSIGNMENT (Standard)
Available Part Number:
SFF130/3; SFF130/66
Package
TO-3
TO-66
Drain
Case
Case
Source
Pin 2
Pin 2
Gate
Pin 1
Pin 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00307B
DOC