Datasheet > EZ8590F

EZ8590F

更新时间： 2024-02-14 01:04:16

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
5页	1095K
描述
85V,92A N-Channel Trench Process Power MOSFETs

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EZ8590F 数据手册

EZ8590

Pb Free Plating Product

85V,92A N-Channel Trench Process Power MOSFETs

General Description

EZ8590

(TO-220 HeatSink)

TSP8592 series is N-channel MOS Field Effect Transistor

designed for high current switching applications. Rugged

EAS capability and ultra low R_DS(ON)is suitable for PWM,

load switching especially for E-Bike controller applications.

Features

● V_DS=85V; I_D=92A@ V_GS=10V;

R_DS(ON)<7.45mΩ @ V_GS=10V

● Special Designed for E-Bike Controller Application

EZ8590F

(TO-220F FullPak)

Schematic Diagram

● Ultra Low On-Resistance

● High UIS and UIS 100% Test

Application

V_DS= 85 V

I_D= 92A

●

64V E-Bike Controller Applications

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

Inverter Application

EZ8590B

(TO-263/D2PAK)

●

Amplifier Application

R_DS(ON)= 6.2 mΩ

Table 1. Absolute Maximum Ratings (TA=25℃)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage (VGS=0V)

±25

VGS

Gate-Source Voltage (VDS=0V)

Drain Current (DC) at Tc=25℃

Drain Current (DC) at Tc=100℃

I_{D (DC)}

I_{DM (pluse)}

dv/dt

P_D

64.4

368

(Note 1)

Drain Current-Continuous@ Current-Pulsed

Peak Diode Recovery Voltage

Maximum Power Dissipation(Tc=25℃)

Derating Factor

V/ns

139

0.93

625

W/℃

Single Pulse Avalanche Energy ^{(Note 2)}

EAS

Operating Junction and Storage Temperature Range

-55 To 175

℃

T_J,T_STG

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2.EAS condition:T =25℃,VDD=40V,V_G=10V,RG=25Ω

Rev.09T

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