Datasheet > FLU10XM

FLU10XM

更新时间： 2024-01-22 09:19:15

品牌	Logo	应用领域
EUDYNA		晶体晶体管
页数	文件大小	规格书
4页	81K
描述
L-Band Medium & High Power GaAs FET

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技术参数
数据手册

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FLU10XM 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	FLATPACK, R-PQFP-F4
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.3	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	配置：	SINGLE
最小漏源击穿电压：	15 V	FET 技术：	JUNCTION
最高频带：	L BAND	JESD-30 代码：	R-PQFP-F4
元件数量：	1	端子数量：	4
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLATPACK
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

FLU10XM 数据手册

FLU10XM

L-Band Medium & High Power GaAs FET

FEATURES

• High Output Power: P

=29.5dBm (Typ.)

1dB

• High Gain: G

=14.5dB (Typ.)

=47% (Typ.)

1dB

• High PAE: η

add

• Hermetic Metal/Ceramic (SMT) Package

• Tape and Reel Available

DESCRIPTION

The FLU10XM is a GaAs FET designed for base station applications in the

PCN/PCS frequency range. This is a new product series that uses a surface

mount package that has been optimized for high volume cost driven applications.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

-5

Tc = 25°C

4.16

°C

-65 to +175

+175

stg

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with

gate resistence of 400Ω.

3. The operating channel temperature (T ) should not exceed 145°C.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limits

Typ.

Item

Symbol

Conditions

Unit

Min.

Max.

450

= 5V, V =0V

300

150

Drain Current

DSS

= 5V, I =200mA

Transconductance

Pinch-Off Voltage

= 5V, I =15mA

-1.0

-5

-2.0 -3.5

GSO

= -15µA

Gate-Source Breakdown Voltage

Output Power at 1 dB G.C.P.

Power Gain at 1 dB G.C.P.

Power Added Efficiency

dBm

1dB

29.5

14.5

28.5

= 10V

f=2.0 GHz

=0.6I

13.5

1dB

DSS

add

Thermal Resistance

°C/W

Channel to Case

Case Style: XM

Note: The RF parameters are measured on a lot basis by sample testing

G.C.P.: Gain Compression Point

at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.

Edition 1.2

July 1999

12 3 4

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