Datasheet > ES2C-B-Q1

ES2C-B-Q1

更新时间： 2024-06-27 12:08:33

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
3页	1530K
描述
SMB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ES2C-B-Q1 数据手册

ES2A-B-Q1 THRU ES2J-B-Q1

2.0A Surface Mount Super

Fast Rectifiers-50-600V

Features

Package outline

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

SMB/DO-214AA

For surface mounted applications

Super fast switching for high efficiency

Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

0.155(3.94)

0.130(3.30)

0.086 (2.20)

0.071 (1.80)

High temperature soldering guaranteed:

250 C/10 seconds at terminals

Glass passivated chip junction

Compliant to RoHS Directive 2011/65/EU

Compliant to Halogen-free

0.183(4.65)

0.160(4.05)

0.012(0.305)

0.006(0.152)

Suffix "-Q1" for AEC-Q101

0.096(2.45)

0.081(2.05)

Mechanical data

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

Case: JEDEC DO-214AA molded plastic body

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

0.219(5.56)

0.202(5.14)

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Maximum ratings and Electrical Characteristics (AT T_A=25^oC unless otherwise noted)

MAX.

Symbol

TYP.

UNIT

MIN.

PARAMETER

CONDITIONS

I_O

Forward rectified current

See Fig.2

2.0

I_FSM

Forward surge current

8.3ms single half sine-wave (JEDEC methode)

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 100^OC

5.0

I_R

Reverse current

μA

Junction to ambient

NOTE 1

^OC/W

Thermal resistance

R_θJA

C_J

^OC

Diode junction capacitance

Storage temperature

f=1MHz and applied 4V DC reverse voltage

+150

-65

T_STG

Operating

V_RMS

(V)

V_R

V_F

t_rr

SYMBOLS

-Q1

V_RRM

(V)

temperature

T_J, (^OC)

(V)

(ns)

*1 Repetitive peak reverse voltage

*2 RMS voltage

ES2A-B

ES2B-B-Q1

ES2C-B-Q1

100

150

200

100

150

200

0.95

105

140

*3 Continuous reverse voltage

*4 Maximum forward voltage@I_F=2.0A

*5 Maximum Reverse recovery time, note 2

-55 to +150

ES2D-B-Q1

ES2E-B-Q1

300

400

600

210

280

420

300

400

600

1.25

1.70

ES2G-B

-Q1

ES2J-B-Q1

Note:

1.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

2. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A

http://www.anbonsemi.com

Document ID

AS-1040008

Issued Date

2003/03/08

Revised Date

Revision

Page.

TEL:+86-755-23776891

2022/08/16

Page 1

FAX:+86-755-81482182

12 3

中文翻译

下载PDF

与ES2C-B-Q1相关器件

型号	品牌	获取价格	描述	数据表
ES2CE3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-214AA, LEAD FREE, PLASTI
ES2C-E3	VISHAY	获取价格	2A, 150V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN
ES2C-E3/52T	VISHAY	获取价格	DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN,
ES2C-E3/5BT	VISHAY	获取价格	DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN,
ES2CF	SUNMATE	获取价格	2.0A patch fast recovery diode 150V SMBF series
ES2CF	CJ	获取价格	SMAF
ES2CF	BL Galaxy Electrical	获取价格	2A,150V,35ns, Surface Mount Fast Recovery Rectifiers
ES2C-F	ANBON	获取价格	SMAF
ES2CF??	MDD	获取价格	SMAF
ES2C-F-Q1	ANBON	获取价格	SMAF