Datasheet > ES29DS800FB-90TGI

ES29DS800FB-90TGI

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
EXCELSEMI		闪存
页数	文件大小	规格书
53页	700K
描述
16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

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E S I

Excel Semiconductor inc.

DEVICE BUS OPERATIONS

on the device address inputs produce valid data on

the device data outputs. The device stays at the read

mode until another operation is activated by writing

commands into the internal command register. Refer

to the AC read cycle timing diagrams for further

details ( Fig. 16 ).

Several device operational modes are provided in

the ES29LV160 device. Commands are used to ini-

tiate the device operations. They are latched and

stored into internal registers with the address and

data information needed to execute the device

operation.

The available device operational modes are listed

in Table 1 with the required inputs, controls, and the

resulting outputs. Each operational mode is

described in further detail in the following subsec-

tions.

Word/Byte Mode Configuration ( BYTE# )

The device data output can be configured by BYTE#

into one of two modes : word and byte modes. If the

BYTE# pin is set at logic ‘1’, the device is configured

in word mode, DQ0 - DQ15 are active and controlled

by CE# and OE#. If the BYTE# pin is set at logic ‘0’,

the device is configured in byte mode, and only data

I/O pins DQ0 - DQ7 are active and controlled by CE#

and OE#. The data I/O pins DQ8 - DQ14 are tri-

stated, and the DQ15 pin is used as an input for the

LSB (A-1) address.

Read

The internal state of the device is set for the read

mode and the device is ready for reading array data

upon device power-up, or after a hardware reset. To

read the stored data from the cell array of the

device, CE# and OE# pins should be driven to V

Standby Mode

while WE# pin remains at V . CE# is the power

control and selects the device. OE# is the output

control and gates array data to the output pins.

When the device is not selected or activated in a

system, it needs to stay at the standby mode, in

which current consumption is greatly reduced with

outputs in the high impedance state.

Word or byte mode of output data is determined by

the BYTE# pin. No additional command is needed

in this mode to obtain array data. Standard micro-

processor read cycles that assert valid addresses

Rev. 0B January 5 , 2006

ES29LV160E

1...3 4 567 8 9...53

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