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EP1019H PDF预览

EP1019H

更新时间: 2024-11-26 18:25:51
品牌 Logo 应用领域
APITECH 测试二极管变容二极管
页数 文件大小 规格书
1页 62K
描述
Variable Capacitance Diode, Ultra High Frequency, 5.6pF C(T), 30V, Silicon, Abrupt,

EP1019H 技术参数

生命周期:Obsolete包装说明:O-CUPM-N1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:LOW INDUCTANCE最小击穿电压:30 V
外壳连接:CATHODE配置:SINGLE
二极管电容容差:10.71%最小二极管电容比:2.5
标称二极管电容:5.6 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:ULTRA HIGH FREQUENCY
JESD-30 代码:O-CUPM-N1元件数量:1
端子数量:1最高工作温度:175 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT最大功率耗散:5 W
认证状态:Not Qualified最小质量因数:1000
最大重复峰值反向电压:30 V最大反向电流:0.02 µA
反向测试电压:25 V子类别:Varactors
表面贴装:NO端子形式:NO LEAD
端子位置:UPPER变容二极管分类:ABRUPT
Base Number Matches:1

EP1019H 数据手册

  

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