Datasheet > EIA7785-6

EIA7785-6

更新时间： 2022-06-13 13:34:35

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
1页	86K
描述
7.70-8.50 GHz 6-Watt Internally Matched Power FET

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EIA7785-6 数据手册

EIA7785-6

UPDATED 11/30/2005

7.70-8.50 GHz 6-Watt Internally Matched Power FET

Excelics

EIA7785-6

.024

FEATURES

.827±.010 .669

.120 MIN

.421

•

7.70– 8.50GHz Bandwidth

.120 MIN

YYWW

Input/Output Impedance Matched to 50 Ohms

+38.5 dBm Output Power at 1dB Compression

10 dB Power Gain at 1dB Compression

36% Power Added Efficiency

.004

.125

.063

.508±.008

Hermetic Metal Flange Package

.442

.004

.105±.008

.168±.010

ALL DIMENSIONS IN INCHES

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 8 V, I_DSQ≈ 2000mA

f = 7.70-8.50GHz

37.5

38.5

dBm

Gain at 1dB Compression

V_DS= 8 V, I_DSQ≈ 2000mA

Gain Flatness

f = 7.70-8.50GHz

G_1dB

∆G

±0.6

V_DS= 8 V, I_DSQ≈ 2000mA

Power Added Efficiency at 1dB Compression

V_DS= 8 V, I_DSQ≈ 2000mA

PAE

f = 7.70-8.50GHz

Drain Current at 1dB Compression

2200

3900

-1.0

4.0

2500

4800

-2.5

4.5

Id_1dB

I_DSS

V_P

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

V_DS= 3 V, I_DS= 39mA

Pinch-off Voltage

Thermal Resistance³

^oC/W

R_TH

Note: 1) Tested with 100 Ohm gate resistor.

2) S.C.L. = Single Carrier Level.

3) Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING^1,2

SYMBOLS

Vds

Vgs

Ids

PARAMETERS

Drain-Source Voltage

ABSOLUTE¹

CONTINUOUS²

-3V

-5

Gate-Source Voltage

Drain Current

I_DSS

4.1A

Forward Gate Current

Reserve Gate Current

Input Power

61.2mA

-10.2mA

37.5dBm

175 ^oC

-65 to +175 ^oC

33W

20.4mA

Igsf

-3.4mA

Igsr

@ 3dB Compression

175 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65 to +175 ^oC

Tstg

33W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 1

Revised November 2005

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