Datasheet > EIA1011-2P

EIA1011-2P

更新时间： 2022-12-18 00:31:41

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
1页	46K
描述
10.7-11.7GHz, 2W Internally Matched Power FET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EIA1011-2P 数据手册

Excelics

EIA/EIB1011-2P

Not recommended for new designs. Contact factory. Effective 03/2003

10.7-11.7GHz, 2W Internally Matched Power FET

10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT

IMPEDANCE MATCHED TO 50 OHM

EIA FEATURES HIGH PAE( 30% TYPICAL)

EIB FEATURES HIGH IP3(46dBm TYPICAL)

+33.5/+33.0dBm TYPICAL P_1dBOUTPUT POWER FOR

EIA/EIB

9.5/8.5dB TYPICAL G_1dBPOWER GAIN FOR EIA/EIB

NON-HERMETIC METAL FLANGE PACKAGE

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

EIA1011-2P

TYP

EIB1011-2P

TYP

SYMBOLS

PARAMETERS/TEST CONDITIONS

UNIT

dBm

MIN

MAX

MIN

MAX

Output Power at 1dB Compression f=10.7-11.7GHz

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

32.5

33.5

33.0

P_1dB

G_1dB

PAE

Gain at 1dB Compression

f=10.7-11.7GHz

8.5

9.5

7.5

8.5

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

Power Added Efficiency at 1dB compression

f=10.7-11.7GHz

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

Drain Current at 1dB Compression

880

850

46*

Id_1dB

IP3

Output 3^rdOrder Intercept Point

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

f=10.7-11.7GHz

dBm

Saturated Drain Current Vds=3V, Vgs=0V

1100

-13

1440

1500

-1.0

-15

1700

-2.5

1100

1360

700

-2.0

-15

1700

-3.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=12mA

Drain Breakdown Voltage Igd=4.8mA

BVgd

Thermal Resistance (Au-Sn Eutectic Attach)

^oC/W

Rth

*Typical –45dBc IM3 at Pout=23dBm/Tone

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-3V

Idss

Igsf

Tch

Tstg

Forward Gate Current

Input Power

180mA

32dBm

175^oC

-65/175^oC

17W

30mA

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

14.2W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085

Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com

下载PDF

与EIA1011-2P相关器件

型号	品牌	描述	获取价格	数据表
EIA1011-4P	EXCELICS	10.7-11.7GHz, 4W Internally Matched Power FET	获取价格
EIA1111	JOHANSON	EIA 1111 High Power Capacitors (S42E Silver Series) Specification	获取价格
EIA1111-2	EXCELICS	11.0-11.5 GHz 2-Watt Internally Matched Power FET	获取价格
EIA1111-6	EXCELICS	11.0-11.5 GHz 6-Watt Internally Matched Power FET	获取价格
EIA1114-2	EXCELICS	11.0-14.0GHz 2-Watt Internally Matched Power FET	获取价格
EIA1114-4	EXCELICS	11.0-14.0GHz 4-Watt Internally Matched Power FET	获取价格