Eudyna GaN-HEMT 45W
EGN21A045IV
Preliminary
High Voltage - High Power GaN-HEMT
FEATURES
・High Voltage Operation : VDS=50V
・High Gain: 16dB(typ.) at Pout=39dBm(Avg.)
・High Efficiency: 35%(typ.) at Pout=39dBm(Avg.)
・Broad Frequency Range : 2100 to 2200MHz
・Proven Reliability
DESCRIPTION
The EGN21A045IV is a 45 Watt GaN-HEMT that offers high efficiency,
high gain, ease of matching, greater consistency and broad bandwidth
for high power L-band amplifiers with 50V operation. This device is
targeted for high voltage, low current operation in digitally modulated
base station applications - ideally suited for W-CDMA base station
amplifiers and other HPA designs while offering ease of use.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Condition
Rating
120
-5
112
-65 to +175
250
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V
V
P
T
DS
GS
T
c
=25oCꢀꢀꢀꢀꢀ
V
t
W
stg
oC
oC
T
ch
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)
Item
Symbol
Condition
Limit
Unit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
V
DS
GF
GR
ch
50
V
I
I
RG
=10 Ω
<9.7
>-3.6
200
mA
mA
oC
RG=10 Ω
T
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Item
Symbol Condition
Limit
Min. Typ. Max.
Unit
Pinch-Off Voltage
Vp
VDS=50V IDS=18mA -1.0
-2.0
-350
-32
-3.5
-
-
V
V
dBc
dB
%
Gate-Drain Breakdown Voltage
3rd Order Inter modulation Distortion
Power Gain
V
IM
G
GDO
I
V
I
GS=- 9.0 mA
DS=50V
DS(DC)=250mA
-
-
3
p
15.0
-
16.0
35
-
-
Drain Efficiency
η
d
P
out=39dBm(Avg.)
Note 1
Channel to Case
Thermal Resistance
R
th
-
1.8
2.0
oC/W
Note 1 : IM3 and Gain test condition as follows:
IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured
over 3.84MHz at fo-10MHz and fI+10MHz.
Edition 1.0
June 2005
1