Datasheet > EGL41GHE3

EGL41GHE3

更新时间： 2024-09-30 04:58:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	193K
描述
DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-213AB, LEAD FREE, PLASTIC, GL41, 2 PIN, Signal Diode

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中文翻译

获取价格

数据手册

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EGL41GHE3 数据手册

BYM12-50 thru BYM12-400, EGL41A thru EGL41G

Vishay General Semiconductor

Surface Mount Glass Passivated Ultrafast Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

1.0 A

50 V to 400 V

30 A

50 ns

V_F

1.0 V, 1.25 V

175 °C

T_jmax.

*Glass-plastic encapsulation

is covered by

Patent No. 3,996,602,

brazed-lead assembly to

Patent No. 3,930,306

DO-213AB (GL41)

Features

Mechanical Data

• Cavity-free glass-passivated junction

Case: DO-213AB, molded epoxy over glass body

• Ideal for automated placement

Epoxy meets UL-94V-0 Flammability rating

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: Two bands indicate cathode end - 1st band

denotes device type and 2nd band denotes repetitive

peak reverse voltage rating

Typical Applications

For use in high frequency rectification and freewheel-

ing application in switching mode converters and

inverters for consumer, computer, automotive and

Telecommunication

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Symbol BYM12-50 BYM12-100 BYM12-150 BYM12-200 BYM12-300 BYM12-400 Unit

Fast efficient device: 1st band is

Green

EGL41A

EGL41B

EGL41C

EGL41D

EGL41F

EGL41G

Polarity color bands (2nd Band)

Gray

Red

100

Pink

150

Orange

200

Brown

300

Yellow

400

Maximum repetitive peak reverse

voltage

V_RRM

Maximum RMS voltage

V_RMS

V_DC

105

150

140

200

210

300

280

400

Maximum DC blocking voltage

100

Maximumaverageforward rectified

current at T_T= 75 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms

single half sine-wave

I_FSM

superimposed on rated load

Operating junction and storage

temperature range

T_J,T_STG

- 65 to + 175

°C

Document Number 88581

10-Aug-05

www.vishay.com

12 3 4

中文翻译

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与EGL41GHE3相关器件

型号	品牌	获取价格	描述	数据表
EGL41GHE3/96	VISHAY	获取价格	DIODE GEN PURP 400V 1A DO213AB
EGL41G-HE3/96	VISHAY	获取价格	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC, GL41, 2 PIN, S
EGL41GHE3/97	VISHAY	获取价格	DIODE GEN PURP 400V 1A DO213AB
EGL41G-HE3/97	VISHAY	获取价格	DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC, GL41, 2 PIN, S
EGL41GHE3_A/H	VISHAY	获取价格	DIODE GEN PURP 400V 1A DO213AB
EGL41x	VISHAY	获取价格	Surface Mount Glass Passivated Ultrafast Rectifier
EGLXT350QE.A2	INTEL	获取价格	Telecom IC, CMOS, PQFP44
EGLXT914QC-B3	INTEL	获取价格	IntelÂ® LXT914 Flexible Quad Ethernet Repeate
EGLXT970AQC.B11	INTEL	获取价格	Ethernet Transceiver, CMOS, PQFP64, ROHS COMPLIANT, PLASTIC, QFP-64
EGLXT973QCA3V	ETC	获取价格	Cortina SystemsÂ® LXT973 10/100 Mbps Dual-Por

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