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EFC4606

更新时间： 2024-02-11 09:31:44
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管通用开关
页数 文件大小 规格书
6页 124K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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EFC4606 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.76FET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：DEPLETION MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.6 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

EFC4606 数据手册

 浏览型号EFC4606的Datasheet PDF文件第2页浏览型号EFC4606的Datasheet PDF文件第3页浏览型号EFC4606的Datasheet PDF文件第4页浏览型号EFC4606的Datasheet PDF文件第5页浏览型号EFC4606的Datasheet PDF文件第6页 
Ordering number : ENA1177  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
EFC4606  
Features  
• 2.5V drive.  
• Best suited for LiB charging and discharging switch.  
• Common-drain type.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Source-to-Source Voltage  
Gate-to-Source Voltage  
Source Current (DC)  
Source Current (Pulse)  
Total Dissipation  
Symbol  
Conditions  
Ratings  
Unit  
V
V
SSS  
24  
±12  
6
V
V
GSS  
I
S
A
I
PW≤100μs, duty cycle≤1%  
60  
A
SP  
P
When mounted on ceramic substrate (5000mm2✕0.8mm)  
1.6  
150  
W
°C  
°C  
T
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Unit  
Parameter  
Symbol  
Conditions  
min  
max  
Source-to-Source Breakdown Voltage  
Zero-Gate Voltage Source Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I =1mA, V =0V  
GS  
Test Circuit 1  
Test Circuit 1  
Test Circuit 2  
Test Circuit 3  
Test Circuit 4  
Test Circuit 5  
Test Circuit 5  
Test Circuit 5  
Test Circuit 5  
24  
V
(BR)SSS  
S
I
V
=20V, V =0V  
GS  
1
μA  
μA  
V
SSS  
GSS  
SS  
GS  
I
V
V
V
=±8V, V =0V  
SS  
±10  
V
(off)  
GS  
=10V, I =1mA  
0.5  
5.3  
22  
23  
26  
1.3  
SS  
SS  
S
Forward Transfer Admittance  
yfs  
⏐
=10V, I =3A  
8.9  
S
⏐
S
R
R
R
R
(on)1  
I =3A, V =4.5V  
S GS  
30  
32  
35  
41  
38  
41  
mΩ  
mΩ  
mΩ  
mΩ  
SS  
SS  
SS  
SS  
(on)2  
(on)3  
(on)4  
I =3A, V =4.0V  
S GS  
Static Source-to-Source On-State Resistance  
I =1.5A, V =3.1V  
S GS  
45  
I =1.5A, V =2.5V  
S GS  
30.5  
57.5  
Marking : FF  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
92408PF TI IM TC-00001623  
No. A1177-1/6  
123456

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