品牌 | Logo | 应用领域 |
京瓷/艾维克斯 - KYOCERA AVX | / | |
页数 | 文件大小 | 规格书 |
7页 | 1294K | |
描述 | ||
Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers between s |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
EC10QS10TE12L | NIEC | Rectifier Diode, Schottky, 1 Element, 0.89A, 100V V(RRM), Silicon, |
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EC10QS10TE12L5 | NIEC | Rectifier Diode, Schottky, 1 Element, 0.89A, 100V V(RRM), Silicon, |
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EC10QS10TE12R | NIEC | Rectifier Diode, Schottky, 1 Element, 0.89A, 100V V(RRM), Silicon, |
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EC10QS10TE12R5 | NIEC | Rectifier Diode, Schottky, 1 Element, 0.89A, 100V V(RRM), Silicon, |
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EC10TR | PHOENIX | Strip Terminal Block |
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EC10UA20 | KYOCERA AVX | Fast recovery diodes are PN junction diodes with the same structure and function as genera |
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