Datasheet > EB13005T

EB13005T

更新时间： 2022-03-20 10:56:17

品牌	Logo	应用领域
JBCAPACITORS		/
页数	文件大小	规格书
3页	499K
描述
TO-262 2.52Mil transistors

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EB13005T 数据手册

13005T

TRANSISTORS

●FEATURES：①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA

●APPLICATION：①FLUORESCENT LAMP ②ELECTRONIC BALLAST

●Absolute Maximum Ratings (Tc=25℃)

TO-262 NPN

PARAMETER

Collector–Base Voltage

Collector–Emitter Voltage

Emitter –Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

VALUE

700

UNIT

400

5.0

Total Power Dissipation

Junction Temperature

Storage Temperature

150

℃

Tstg

-65-150

● Electronic Characteristics (Tc=25℃)

CHARACTERISTICS

Collector–Base Cutoff Current

Collector–Emitter Cutoff Current

Collector–Emitter Voltage

Emitter –Base Voltage

SYMBOL

ICBO

TEST CONDITION

VCB=700v

MIN

MAX UNIT

100

250

µA

ICEO

VCE=400v

VCEO

IC=10mA IB=0

IE=1mA IC=0

IC=1A IB=0.2A

IC=4A IB=1A

IC=1A IB=0.2A

VCE=5v IC=10mA

VCE=5v IC=1A

VCE=5v IC=4A

VCC=5V

400

VEBO

Collector–Emitter Saturation

Voltage

Vcesat

0.5

1.5

Base–Emitter Saturation Voltage

Vbesat

HFE

DC Current Gain

Storage Time

Falling Time

2.0

4.0

1.0

µS

IC=0.5A

T_f

●CLASSIFICATION OF HFE AND TS

HFE

10-15

15-20

2.5-3.0

20-25

25-30

2.0-2.5

3.0-3.5

3.5-4.0

1/3

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