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EABS1D PDF预览

EABS1D

更新时间: 2024-02-08 00:16:01
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
4页 218K
描述
1A, 200V - 600V Miniature Ultrafast Glass Passivated Bridge Rectifiers

EABS1D 数据手册

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EABS1D - EABS1J  
Taiwan Semiconductor  
CREAT BY ART  
1A, 200V - 600V Miniature Ultrafast Glass Passivated Bridge Rectifiers  
FEATURES  
- Ideal for automated placement, for compact PCB design  
- High surge current capability  
- Ultrafast reverse recovery time for high frequency  
- Negligible leakage current  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21  
ABS  
TYPICAL APPLICATIONS  
General purpose rectification for AC/DC bridge full wave rectification for SMPS.  
PFC function for LED lighting ballast. Also suitable for secondary stage of  
high frequency inverters.  
MECHANICAL DATA  
Case: Molded plastic body  
Molding compound, UL flammability classification rating 94V-0  
Moisture sensitivity level: level 1, per J-STD-020  
Part no. with suffix "H" means AEC-Q101 qualified  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: Polarity as marked on the body  
Weight: 0.09 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
PARAMETER  
Maximum repetitive peak reverse voltage  
EABS1D  
EABS1G  
EABS1J  
600  
SYMBOL  
VRRM  
UNIT  
200  
400  
280  
400  
1
V
V
V
A
Maximum RMS voltage  
VRMS  
140  
420  
Maximum DC blocking voltage  
Maximum average forward rectified current  
VDC  
200  
600  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
I2t  
A2s  
V
Rating for fusing (t<8.3ms)  
6.64  
1.20  
Maximum instantaneous forward voltage (Note 1)  
IF= 1 A  
VF  
0.95  
1.70  
TJ=25°C  
Maximum reverse current @ rated VR  
TJ=125°C  
1
200  
IR  
trr  
μA  
ns  
Maximum reverse recovery time (Note 2)  
35  
RθJL  
RθJA  
25  
80  
Typical thermal resistance  
°C/W  
Operating junction temperature range  
Storage temperature range  
TJ  
- 55 to +150  
- 55 to +150  
°C  
°C  
TSTG  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A  
Document Number: DS_D1403002  
Version: B15  

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