Datasheet > E12MUWT1C

E12MUWT1C

更新时间： 2023-12-06 20:07:46

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	213K
描述
静电保护二极管

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E12MUWT1C 数据手册

E12MUWT1C

ESD Protection Diode

PINNING

DESCRIPTION

Cathode

Features

• Low leakage current

Anode

• Unidirectional ESD protection of one line

Top View

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

180

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

IEC61000-4-2 (ESD)

I_PP

Air

Contact

± 30

V_ESD

Operation Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 5 mA

V_(BR)R

13.5

15.8

100

1.1

Reverse Current

at V_RWM= 12 V

I_R

Forward Voltage

at I_F= 10 mA

V_F

Clamping Voltage

V_C

at I_PP= 1 A , tp = 8/20 µs

at I_PP= 5 A , tp = 8/20 µs

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

14.5

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.04

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 25/02/2022 Rev: 01

12 3

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