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E0900NC520 PDF预览

E0900NC520

更新时间: 2024-02-22 02:16:43
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
11页 339K
描述
Rectifier Diode, 1 Phase, 1 Element, 969A, 5200V V(RRM), Silicon,

E0900NC520 技术参数

生命周期:Obsolete包装说明:O-XEDB-N2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-XEDB-N2最大非重复峰值正向电流:16800 A
元件数量:1相数:1
端子数量:2最大输出电流:969 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大重复峰值反向电压:5200 V最大反向恢复时间:2.4 µs
表面贴装:YES端子形式:NO LEAD
端子位置:ENDBase Number Matches:1

E0900NC520 数据手册

 浏览型号E0900NC520的Datasheet PDF文件第1页浏览型号E0900NC520的Datasheet PDF文件第2页浏览型号E0900NC520的Datasheet PDF文件第3页浏览型号E0900NC520的Datasheet PDF文件第5页浏览型号E0900NC520的Datasheet PDF文件第6页浏览型号E0900NC520的Datasheet PDF文件第7页 
WESTCODE An IXYS Company  
High Power Sonic FRD Types E0900NC450 to E0900NC520  
4.0 Reverse Recovery Loss  
The following procedure is recommended for use where it is necessary to include reverse recovery loss.  
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse  
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.  
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated  
from:  
TK = Tj(MAX ) E ⋅  
[
k + f RthJK  
]
Where k = 0.2314 (°C/W)/s  
E = Area under reverse loss waveform per pulse in joules (W.s.)  
f = Rated frequency in Hz at the original sink temperature.  
RthJK = d.c. thermal resistance (°C/W)  
The total dissipation is now given by:  
W(tot) = W(original ) + E f  
NOTE 1 - Reverse Recovery Loss by Measurement  
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the  
charge, care must be taken to ensure that:  
(a) AC coupled devices such as current transformers are not affected by prior passage of high  
amplitude forward current.  
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope  
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.  
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically  
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this  
snubber is shown below:  
Vr  
di  
CS ⋅  
dt  
R2 = 4⋅  
Where: Vr = Commutating source voltage  
CS = Snubber capacitance  
R = Snubber resistance  
Provisional Data Sheet. Types E0900NC450 to E0900NC520 Issue 3  
Page 4 of 11  
February, 2005  

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