5秒后页面跳转
DWEP70-10 PDF预览

DWEP70-10

更新时间: 2024-01-05 10:14:53
品牌 Logo 应用领域
IXYS 整流二极管快速恢复二极管
页数 文件大小 规格书
22页 765K
描述
Rectifier Diodes & FRED

DWEP70-10 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:DIE包装说明:R-XUUC-N1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.47Is Samacsys:N
应用:FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XUUC-N1元件数量:1
相数:1端子数量:1
最大输出电流:129 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DWEP70-10 数据手册

 浏览型号DWEP70-10的Datasheet PDF文件第2页浏览型号DWEP70-10的Datasheet PDF文件第3页浏览型号DWEP70-10的Datasheet PDF文件第4页浏览型号DWEP70-10的Datasheet PDF文件第5页浏览型号DWEP70-10的Datasheet PDF文件第6页浏览型号DWEP70-10的Datasheet PDF文件第7页 
Page  
Contents  
Symbols and Definitions  
Nomenclature  
General Information  
Assembly Instructions  
2
2
3
4
5
FRED, Rectifier Diode and Thyristor Chips in Planar Design  
IGBT Chips  
VCES  
IC  
G-Series, Low VCE(sat) B2 Types  
G-Series, Fast C2 Types  
S-Series, SCSOA Capability, Fast Types  
E-Series, Improved NPT³ technology  
600 ...1200 V  
7 ... 20 A  
7 ... 20 A  
10 ... 20 A  
20 ... 150 A  
6
6
6
7
600 V  
600 V  
1200 ... 1700 V  
MOSFET Chips  
VDSS  
RDS(on)  
HiPerFETTM Power MOSFET  
70 ...1200 V  
55 ... 300 V  
-100 ...-600 V  
500 ...1000 V  
0.005 ... 4.5  
0.015 ... 0.135 Ω  
0.06 ... 1.2 Ω  
8-10  
11  
12  
PolarHTTM MOSFET, very Low RDS(on)  
P-Channel Power MOSFET  
N-Channel Depletion Mode MOSFET  
30 ... 110 Ω  
12  
Layouts  
13-17  
Bipolar Chips  
VRRM / VDRM  
IF(AV)M / IT(AV)M  
Rectifier Diodes  
FREDs  
1200 ... 1800 V  
600 ... 1200 V  
200 ... 1200 V  
600 ... 1800 V  
100 ... 600 V  
8 ... 200 V  
12 ... 416 A  
8 ... 244 A  
9 ... 148 A  
12 ... 150 A  
3.5 ... 25 A  
28 ... 145 A  
15 ... 540 A  
10 ... 26 A  
18-19  
20-21  
22-23  
24-25  
26-27  
28-31  
32-33  
34  
Low Leakage FREDs  
SONIC-FRDTM Diodes  
GaAs Schottky Diodes  
Schottky Diodes  
Phase Control Thyristors  
Fast Rectifier Diodes  
800 ... 2200 V  
1600 ... 1800 V  
Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates  
What is DCB/DAB?  
DCB Specification  
35  
36  
IXYS reserves the right to change limits, test conditions and dimensions  
1

与DWEP70-10相关器件

型号 品牌 获取价格 描述 数据表
DWEP70-10S LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 129A, Silicon, DIE-1
DWEP75-06 IXYS

获取价格

Rectifier Diodes & FRED
DWEP75-06 LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 162A, Silicon, DIE-1
DWEP75-06S LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 162A, Silicon, DIE-1
DWEP77-02 IXYS

获取价格

Rectifier Diodes & FRED
DWEP77-02 LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 20A, Silicon, DIE-1
DWEP77-02S IXYS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 244A, Silicon, DIE-1
DWEP77-02S LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 244A, Silicon, DIE-1
DWEP8-06 LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, Silicon, DIE-1
DWEP8-06S LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, Silicon, DIE-1