Datasheet > DTS2012

DTS2012

更新时间： 2022-04-21 08:47:29

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
9页	1870K
描述
N-Channel 30 V (D-S) MOSFET Halogen-free

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DTS2012 数据手册

DTS2012

www.din-tek.jp

SPECIFICATIONS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V_DS

V_GS= 0 V, I_D= 250 µA

I_D= 250 µA

mV/°C

_DSTemperature Coefficient

V_DS/T_J

V_GS(th)/T_J

V_GS(th)

V_GS(th)Temperature Coefficient

- 3.2

Gate-Source Threshold Voltage

0.6

1.3

0.5

V_DS= V_GS, I_D= 250 µA

V_DS= 0 V, V_GS

4.5 V

12 V

Gate-Source Leakage

I_GSS

µA

V_DS= 30 V, V_GS= 0 V

Zero Gate Voltage Drain Current

On-State Drain Current^a

I_DSS

V_DS= 30 V, V_GS= 0 V, T_J= 55 °C

I_D(on)

_DS 5 V, V_GS= 4.5 V



V_GS= 10 V, I_D= 3.7 A

V_GS= 4.5 V, I_D= 3.6 A

V_GS= 2.5 V, I_D= 1.5 A

V_DS= 15 V, I_D= 3.7 A

0.036

0.040

0.048

0.045

0.049

0.060

Drain-Source On-State Resistance^a

R_DS(on)

Forward Transconductance^a

g_fs

Dynamic^b

V_DS= 15 V, V_GS= 10 V, I_D= 4.7 A

8.8

13.5

Total Gate Charge

Q_g

Gate-Source Charge

Q_gs

Q_gd

R_g

_DS= 15 V, V_GS= 4.5 V, I_D= 4.7 A

f = 1 MHz

0.9

1.1

Gate-Drain Charge

Gate Resistance

0.4

0.58

0.8

3.8

1.5

0.2

0.3

k

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

0.29

0.4

1.9

0.75

0.1

0.15

Rise Time

_DD= 15 V, R_L= 4.1 

_D 3.7 A, V_GEN= 4.5 V, R_g= 1 

Turn-Off DelayTime

Fall Time

µs

Turn-On Delay Time

Rise Time

_DD= 15 V, R_L= 4.1 

_D 3.7 A, V_GEN= 10 V, R_g= 1 

Turn-Off DelayTime

Fall Time

0.75

1.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

I_S

I_SM

V_SD

t_rr

T_C= 25 °C

2.3

I_S= 3.7 A, V_GS= 0 V

0.85

1.2

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Q_rr

t_a

I_F= 3.7 A, dI/dt = 100 A/µs, T_J= 25 °C

6.5

5.5

t_b

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

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