DTS2014
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N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
ID (A)e
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
5.2a
0.024 at VGS = 4.5 V
0.033 at VGS = 2.5 V
0.036 at VGS = 1.8 V
•
•
5a
20
8.8 nC
• Compliant to RoHS Directive 2002/95/EC
4.6
APPLICATIONS
•
DC/DC Converters
•
Load Switch for Portable Applications
SOT-23
G
S
1
2
3
D
Top View
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
12
5.2a
5
5b, c
4b, c
20
T
T
C = 25 °C
C = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
Pulsed Drain Current
IDM
IS
TC = 25 °C
1.75
1.04b, c
2.1
Continuous Source-Drain Diode Current
T
A = 25 °C
C = 25 °C
T
TC = 70 °C
A = 25 °C
TA = 70 °C
1.3
1.25b, c
0.8b, c
Maximum Power Dissipation
PD
W
T
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
80
Maximum
100
Unit
Maximum Junction-to-Ambientb, d
t ≤ 5 s
Steady State
°C/W
Maximum Junction-to-Foot (Drain)
40
60
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
e. Based on TC = 25 °C.
1