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DTC143TUB PDF预览

DTC143TUB

更新时间: 2024-02-25 18:04:42
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
3页 74K
描述
100mA / 50V Digital transistors

DTC143TUB 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.56
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC143TUB 数据手册

 浏览型号DTC143TUB的Datasheet PDF文件第2页浏览型号DTC143TUB的Datasheet PDF文件第3页 
Transistors  
DTC143TUB  
100mA / 50V Digital transistors  
(with built-in resistors)  
DTC143TUB  
zApplications  
zDimensions (Unit : mm)  
Inverter, Interface, Driver  
UMT3F  
2.0  
zFeatures  
0.9  
0.32  
(3)  
1) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see equivalent circuit).  
2) The bias resistors consist of thin-film resistors  
with complete isolation to allow negative biasing  
of the input. They also have the advantage of  
almost completely eliminating parasitic effects.  
3) Only the on/off conditions need to be set for  
operation, making the device design easy.  
(1)  
0.65 0.65  
1.3  
(2)  
0.13  
Each lead has same dimensions  
(1) Base  
(2) Emitter  
(3) Collector  
Abbreviated symbol : 03  
zStructure  
zEquivalent circuit  
NPN silicon epitaxial planar transistor type  
(Resistor built-in)  
C
E
zPackaging specifications  
B
R1  
Package  
UMT3F  
Taping  
TL  
Packaging type  
Code  
B : Base  
C : Collector  
E : Emitter  
Part No.  
Basic ordering unit (pieces)  
3000  
DTC143TUB  
R1=4.7k  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
CBO  
CEO  
EBO  
50  
V
V
50  
5
V
I
C
100  
mA  
mW  
°C  
°C  
1  
Power dissipation  
P
D
200  
Junction temperature  
Tj  
Tstg  
150  
Range of storage temperature  
55 to +150  
1 Each terminal mounted on a recommended land  
1/2  

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