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DTA143EE

更新时间: 2024-09-28 22:50:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 97K
描述
Bias Resistor Transistor

DTA143EE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-75包装说明:CASE 463-01, SC-75, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.04
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):15
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DTA143EE 数据手册

 浏览型号DTA143EE的Datasheet PDF文件第2页浏览型号DTA143EE的Datasheet PDF文件第3页浏览型号DTA143EE的Datasheet PDF文件第4页 
Order this document  
by DTA143EE/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon Surface Mount Transistor with  
Monolithic Bias Resistor Network  
3
2
1
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic  
bias network consisting of two resistors; a series base resistor and a base–emitter  
resistor. These digital transistors are designed to replace a single device and its  
external resistor bias network. The BRT eliminates these individual components by  
integrating them into a single device. The DTA143EE is housed in the  
SOT–416/SC–90 package which is ideal for low–power surface mount applications  
where board space is at a premium.  
CASE 463–01, STYLE 1  
SOT–416/SC–90  
Simplifies Circuit Design  
OUT (3)  
R
1
Reduces Board Space  
IN (1)  
Reduces Component Count  
R
2
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.  
GND (2)  
R
R
= 4.7 k  
= 4.7 k  
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
50  
Unit  
Output Voltage  
V
O
Vdc  
Vdc  
Input Voltage  
V
I
–30  
Output Current  
I
O
–100  
mAdc  
DEVICE MARKING  
DTA143EE = 43  
THERMAL CHARACTERISTICS  
(1)  
Power Dissipation @ T = 25°C  
P
*125  
mW  
°C  
A
D
Operating and Storage Temperature Range  
Junction Temperature  
T , T  
J stg  
55 to +150  
150  
T
°C  
J
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
–0.5  
Unit  
Input Off Voltage (V = –5.0 Vdc, I = –100 µAdc)  
V
V
Vdc  
Vdc  
O
O
I(off)  
Input On Voltage (V = –0.3 Vdc, I = –20 mAdc)  
–3.0  
O
O
I(on)  
Output On Voltage (I = –10 mAdc, I = –0.5 mAdc)  
V
O(on)  
–0.3  
–1.8  
–500  
Vdc  
O
I
Input Current (V = –5.0 Vdc)  
I
I
mAdc  
nAdc  
I
Output Cutoff Current (V = 50 Vdc)  
I
O
O(off)  
DC Current Gain (V = –5.0 Vdc, I = –10 mAdc)  
G
20  
O
O
I
Input Resistance  
Resistance Ratio  
R
3.3  
0.8  
4.7  
1.0  
6.1  
kOhms  
1
R /R  
1
1.2  
2
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
* Typical electrical characteristic curves are not available at this time.  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
Thermal Clad is a trademark of the Bergquist Company  
Motorola, Inc. 1996  

DTA143EE 替代型号

型号 品牌 替代类型 描述 数据表
DTA143EET1G ONSEMI

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