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DTA115EE

更新时间： 2024-01-19 10:15:16
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
9页 126K
描述
Digital Transistors (BRT) R1 = 100 k, R2 = 100 k

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中文翻译

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DTA115EE 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.6
Is Samacsys：N其他特性：DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.1
最大集电极电流 (IC)：0.02 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：27
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.3 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DTA115EE 数据手册

 浏览型号DTA115EE的Datasheet PDF文件第2页浏览型号DTA115EE的Datasheet PDF文件第3页浏览型号DTA115EE的Datasheet PDF文件第4页浏览型号DTA115EE的Datasheet PDF文件第5页浏览型号DTA115EE的Datasheet PDF文件第6页浏览型号DTA115EE的Datasheet PDF文件第7页 
MUN2136, MUN5136,  
DTA115EE, DTA115EM3  
Digital Transistors (BRT)  
R1 = 100 kW, R2 = 100 kW  
PNP Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
PIN CONNECTIONS  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
MARKING DIAGRAMS  
• Reduces Component Count  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SC−70/SOT−323  
CASE 419  
Compliant  
XX MG  
G
STYLE 3  
MAXIMUM RATINGS (T = 25°C)  
A
1
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
SC−75  
CASE 463  
STYLE 1  
V
XX M  
XX M  
CBO  
V
50  
Vdc  
CEO  
1
I
C
100  
40  
mAdc  
Vdc  
SOT−723  
CASE 631AA  
STYLE 1  
V
IN(fwd)  
1
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 1  
DTA115E/D  
1234567...9

中文翻译

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