生命周期: | Obsolete | 包装说明: | MODULE-5 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
其他特性: | FAST | 外壳连接: | ISOLATED |
标称电路换相断开时间: | 12 µs | 配置: | SINGLE WITH BUILT-IN DIODE |
关态电压最小值的临界上升速率: | 500 V/us | 最大直流栅极触发电流: | 150 mA |
快速连接描述: | G-GR | 螺丝端子的描述: | A-K-AK |
最大维持电流: | 250 mA | JESD-30 代码: | R-XUFM-X5 |
最大漏电流: | 30 mA | 通态非重复峰值电流: | 2200 A |
元件数量: | 1 | 端子数量: | 5 |
最大通态电流: | 81000 A | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
认证状态: | Not Qualified | 最大均方根通态电流: | 180 A |
断态重复峰值电压: | 600 V | 重复峰值反向电压: | 600 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DT81F06KCM | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 180A I(T)RMS, 81000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem |
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DT81F06KDM-A | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 81000mA I(T), 600V V(RRM) |
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DT81F06KEB-A | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 81000mA I(T), 600V V(RRM) |
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DT81F06KEC | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 180A I(T)RMS, 81000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem |
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DT81F06KEL | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 180A I(T)RMS, 81000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem |
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DT81F06KEL-A | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 180A I(T)RMS, 81000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem |
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DT81F06KEM | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 180A I(T)RMS, 81000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem |
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DT81F06KEM-K | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 81000mA I(T), 600V V(RRM) |
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DT81F08KCL | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 180A I(T)RMS, 81000mA I(T), 800V V(DRM), 800V V(RRM), 1 Elem |
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DT81F08KDB | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 180A I(T)RMS, 81000mA I(T), 800V V(DRM), 800V V(RRM), 1 Elem |
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