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DS3487M PDF预览

DS3487M

更新时间: 2024-01-10 00:41:40
品牌 Logo 应用领域
德州仪器 - TI 驱动器接口集成电路光电二极管
页数 文件大小 规格书
11页 760K
描述
DS3487 Quad TRI-STATE Line Driver

DS3487M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP16,.3针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.38
差分输出:YES驱动器位数:4
高电平输入电流最大值:0.00005 A输入特性:STANDARD
接口集成电路类型:LINE DRIVER接口标准:EIA-422
JESD-30 代码:R-PDIP-T16JESD-609代码:e3
长度:19.304 mm湿度敏感等级:1
功能数量:4端子数量:16
最高工作温度:70 °C最低工作温度:
最小输出摆幅:2 V输出特性:3-STATE
输出极性:COMPLEMENTARY封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP16,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified最大接收延迟:
座面最大高度:5.08 mm子类别:Line Driver or Receivers
标称供电电压:5 V表面贴装:NO
技术:BIPOLAR温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40最大传输延迟:15 ns
宽度:7.62 mmBase Number Matches:1

DS3487M 数据手册

 浏览型号DS3487M的Datasheet PDF文件第1页浏览型号DS3487M的Datasheet PDF文件第3页浏览型号DS3487M的Datasheet PDF文件第4页浏览型号DS3487M的Datasheet PDF文件第5页浏览型号DS3487M的Datasheet PDF文件第6页浏览型号DS3487M的Datasheet PDF文件第7页 
DS3487  
SNLS355C MAY 1998REVISED APRIL 2013  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Absolute Maximum Ratings(1)(2)  
Supply Voltage  
8V  
5.5V  
Input Voltage  
Storage Temperature  
Maximum Power Dissipation (3) at 25°C  
PDIP Package  
65°C to +150°C  
1476 mW  
1051 mW  
SOIC Package  
Lead Temperature  
(Soldering, 4 seconds)  
260°C  
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be verified. They are not meant to imply  
that the devices should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device  
operation.  
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.  
(3) Derate PDIP molded package 11.9 mW/°C above 25°C. Derate SOIC package 8.41 mW/°C above 25°C.  
Operating Conditions  
Min  
4.75  
0
Max  
5.25  
+70  
Units  
V
Supply Voltage, VCC  
DS3487  
Temperature (TA)  
DS3487  
°C  
Electrical Characteristics(1)(2)(3)(4)  
Parameter  
Test Conditions  
Min Typ  
Max  
Units  
V
VIL  
VIH  
IIL  
Input Low Voltage  
Input High Voltage  
Input Low Current  
Input High Current  
0.8  
2.0  
V
V IL = 0.5V  
200  
50  
μA  
μA  
μA  
V
IIH  
VIH = 2.7V  
VIH = 5.5V  
100  
1.5  
0.5  
VCL  
VOL  
VOH  
IOS  
Input Clamp Voltage  
Output Low Voltage  
I CL = 18 mA  
I OL = 48 mA  
I OH = 20 mA  
V
Output High Voltage  
Output Short-Circuit Current  
2.5  
V
40  
140  
100  
100  
mA  
μA  
μA  
μA  
μA  
V
IOZ  
Output Leakage Current  
(TRI-STATE)  
VO = 0.5V  
VO = 5.5V  
IOFF  
Output Leakage Current Power OFF  
VO = 6V  
VO = 0.25V  
100  
VCC = 0V  
100  
0.4  
|VOS– VOS  
VT  
|
Difference in Output Offset Voltage  
Differential Output Voltage  
2.0  
V
|VT|– VT|  
ICC  
Difference in Differential Output Voltage  
Power Supply Current  
0.4  
80  
60  
V
Active  
50  
35  
mA  
mA  
TRI-STATE  
(1) Unless otherwise specified min/max limits apply across the 0°C to +70°C range for the DS3487. All typicals are given for VCC = 5V and  
TA = 25°C.  
(2) All currents into device pins are positive, all currents out of device pins as negative. All voltages are referenced to ground unless  
otherwise specified.  
(3) Only one output at a time should be shorted.  
(4) Symbols and definitions correspond to EIA RS-422, where applicable.  
2
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Copyright © 1998–2013, Texas Instruments Incorporated  
Product Folder Links: DS3487  

DS3487M 替代型号

型号 品牌 替代类型 描述 数据表
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