DRV8300
SLVSFG5 – SEPTEDMRBEVR82300200
SLVSFG5 – SEPTEMBER 2020
www.ti.com
DRV8300: Three-Phase BLDC Gate Driver
and GVDD for the low-side MOSFETs. The Gate
Drive architecture supports peak up to 750-mA source
and 1.5-A sink currents.
1 Features
•
Triple Half-Bridge Gate driver
– Drives 3 High-Side and 3 Low-Side N-Channel
MOSFETs (NMOS)
Integrated Bootstrap Diodes (DRV8300D devices)
Supports Inverting and Non-Inverting INLx inputs
Bootstrap gate drive architecture
– 750-mA source current
The phase pins SHx is able to tolerate the significant
negative voltage transients; while high side gate driver
supply BSTx and GHx is able to support to higher
positive voltage transients (115-V) abs max voltage
which improves robustness of the system. Small
propagation delay and delay matching specifications
minimize the dead-time requirement which further
improves efficiency. Undervoltage protection is
provided for both low and high side through GVDD
and BST undervoltage lockout.
•
•
•
– 1.5-A Sink current
•
•
•
Low leakage current on SHx pins (<55 µA)
Absolute maximum BSTx voltage upto 115-V
Supports negative Trasients upto -22-V on SHx
pins
Buit-in cross conduction prevention
Adjustable Deadtime through DT pin for QFN
package variants
Fixed Deadtime insertion of 200 nS for TSSOP
package variants
Supports 3.3-V, and 5-V logic inputs with 20-V Abs
Max
Device Information (1)
•
•
PART NUMBER
PACKAGE
BODY SIZE (NOM)
6.40 mm × 4.40 mm
6.40 mm × 4.40 mm
4.00 mm × 4.00 mm
6.40 mm × 4.40 mm
4.00 mm × 4.00 mm
6.40 mm × 4.40 mm
DRV8300DIPW
TSSOP (20)
DRV8300DPW (2)
DRV8300DRGE (2)
DRV8300NPW (2)
DRV8300NRGE (2)
DRV8300NIPW (2)
TSSOP (20)
VQFN (24)
TSSOP (20)
VQFN (24)
TSSOP (20)
•
•
•
•
4 nS typical propogation delay matching
Compact QFN and TSSOP packages and
footprints
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
(2) Device available for preview only
•
•
Efficient system design with Power Blocks
Integrated protection features
– BST undervoltage lockout (BSTUV)
– GVDD undervoltage (GVDDUV)
PVDD
GVDD
DBx
BSTA, BSTB, BSTC
GVDD
INHA
INHB
INHC
GHA, GHB, GHC
SHA, SHB, SHC
2 Applications
MCU
DRV8300D
•
•
•
•
•
•
•
E-Bikes, E-Scooters, and E-Mobility
Fans, Pumps, and Servo Drives
Brushless-DC (BLDC) Motor Modules and PMSM
Cordless Garden and Power Tools, Lawnmowers
Cordless Vacuum Cleaners
INLA
INLB
INLC
GLA, GLB. GLC
GND
Repeated for 3
phases
Simplified Schematic for DRV8300D
Drones, Robotics, and RC Toys
Industrial and Logistics Robots
GVDD
DBx
3 Description
PVDD
BSTA, BSTB, BSTC
DRV8300 family of devices provide three half-bridge
gate drivers, each capable of driving high-side and
low-side N-channel power MOSFETs. The DRV8300D
generates the correct gate drive voltages using an
integrated bootstrap diode and external capacitor for
the high-side MOSFETs and GVDD for the low-side
MOSFETs. The DRV8300N generates the correct
gate drive voltages using an external bootstrap diode
and external capacitor for the high-side MOSFETs
GVDD
INHA
INHB
INHC
GHA, GHB, GHC
SHA, SHB, SHC
MCU
DRV8300N
INLA
INLB
INLC
GLA, GLB. GLC
GND
Repeated for 3
phases
Simplified Schematic for DRV8300N
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. ADVANCE INFORMATION for preproduction products; subject to change
Copyright © 2020 Texas Instruments Incorporated
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