DRF1301
Driver Output Characteristics
Symbol
Parameter
Min
Typ
2500
.8
Max
Unit
pF
Cout
Output Capacitance
Rout
Output Resistance
Ω
Lout
Output Inductance
3
nH
FMAX
FMAX
Operating Frequency CL = 3000nF + 50Ω
Operating Frequency RL = 50Ω
30
50
MHz
Driver Thermal Characteristics
Symbol
Parameter
Min
Typ
1.5
Max
Unit
°C/W
°C
R
Thermal Resistance Junction to Case
Thermal Resistance Junction to Heat Sink
Storage Temperature
JC
θ
R
2.5
JHS
θ
-55 to 150
TJSTG
PDJHS
PDJC
60
Maximum Power Dissipation @ TSINK = 25°C
Total Power Dissipation @ TC = 25°C
W
100
MOSFET Absolutes Maximum Ratings (Per-Section)
Symbol
BVDSS
ID
Parameter
Min
Typ
Max
15
Unit
V
Drain Source Voltage
1000
Continuous Drain Current THS = 25°C
Drain-Source On State Resistance
Operating Temperature
A
RDS(on)
Tjmax
1
Ω
175
°C
MOSFET Dynamic Characteristics (Per-Section)
Symbol
Parameter
Min
Typ
1800
335
75
Max
Unit
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ISS
Coss
Crss
pF
MOSFET Thermal Characteristics (Total Package)
Symbol
Parameter
Min
Type
.06
Max
Unit
°C/W
°C
R
Junction to Case Thermal Resistance
Junction to Heat Sink Thermal Resistance
Storage Junction Temperature
JC
θ
R
.14
JHS
θ
-55 to 150
TJSTG
PDHS
PDC
1.07
2.5
Maximum Power Dissipation @ TSINK = 25°C
Total Power Dissipation @ TC = 25°C
KW
Section A and B Output Switching Performance
Symbol
TON
Characteristic
Min
2
Typ
3
Max
4
Unit
Leading Edge 10% to 90%
Trailing Edge 10% to 90%
Total Throughput Delay Time, ON
Total Throughput Delay Time, OFF
TOFF
45
45
49
TBD
TBD
50
49
47
51
TDLY(ON)
TDLY(OFF)
ns
∆TDLY(ON)
∆TDLY(OFF)
Delta TON Delay between Section A and B
Delta TOFF Delay between Section A and B
-0.5
0
0
1.5
1.3
0.6
Microsemi reserves the right to change, without notice, the specifications and information contained herein.