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DRF1402F PDF预览

DRF1402F

更新时间: 2024-01-22 03:59:56
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
6页 316K
描述
UHF POWER TRANSISTOR

DRF1402F 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):0.35 A配置:Single
最小直流电流增益 (hFE):60最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:YES

DRF1402F 数据手册

 浏览型号DRF1402F的Datasheet PDF文件第2页浏览型号DRF1402F的Datasheet PDF文件第3页浏览型号DRF1402F的Datasheet PDF文件第4页浏览型号DRF1402F的Datasheet PDF文件第5页浏览型号DRF1402F的Datasheet PDF文件第6页 
UHF POWER TRANSISTOR  
NPN SiGe RF TRANSISTOR  
DRF1402F  
SOT- 89  
The DRF1402F is a low cost, NPN medium power  
SiGe HBT(Hetero-Junction Bipolar Transistor)  
encapsulated in a plastic SOT-89 SMD package.  
The DRF1402F can be used as a driver device or  
an output device, depending on the specific application  
4
FEATURES  
o 4.8 Volt operation  
o P1dB 28 dBm @f=465MHz  
o Power gain 10 dB @f=465MHz  
PIN CONFIGURATION  
PIN NO  
SYMBOL  
DESCRIPTION  
APPLICATIONS  
1
2
3
4
B
C
E
C
base  
collector  
emitter  
o Hand-held radio equipment in common  
emitter class-AB operation in 450 MHz  
communication band.  
collector  
MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
CONDITION  
VALUE  
Unit  
20  
8
4
V
V
V
mA  
W
VCBO  
VCEO  
VEBO  
Ic  
PT  
TSTG  
TJ  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Total Power Dissipation  
Storage Temperature  
Open Emitter  
Open Base  
Open Collector  
350  
1
-65 ~ 150  
150  
Ts = 60; note 1  
Operating Junction Temperature  
Sep-03-2002  
2nd Edition  
www.tachyonics.co.kr  
- 1/6 -  

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