Datasheet > DRF1301

DRF1301

更新时间： 2024-02-21 04:15:16

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	171K
描述
MOSFET Push-Pull Hybrid

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技术参数
数据手册

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DRF1301 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DMA
包装说明：	ROHS COMPLIANT PACKAGE-18	针数：	18
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.79
高边驱动器：	NO	接口集成电路类型：	PUSH-PULL BASED MOSFET DRIVER
JESD-30 代码：	R-XDMA-F18	JESD-609代码：	e1
湿度敏感等级：	1	功能数量：	1
端子数量：	18	标称输出峰值电流：	8 A
封装主体材料：	UNSPECIFIED	封装等效代码：	MODULE,18LEAD,1.7
封装形状：	RECTANGULAR	封装形式：	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	15 V
认证状态：	Not Qualified	子类别：	MOSFET Drivers
最小供电电压：	8 V	标称供电电压：	15 V
表面贴装：	YES	技术：	HYBRID
端子面层：	TIN SILVER COPPER	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	0.051 µs	接通时间：	0.047 µs
Base Number Matches：	1

DRF1301 数据手册

DRF1301

None of the inputs to U1 or U2 of the DRF1300 are isolated for direct connection to a ground referenced power supply or control circuitry.

Isolation appropriate to the application is the responsibility of the end user. It is imperative that high output currents be restricted to

the Source (14, 16, 18) and drain (15, 17) pins by design. See DRF100 for more information on Driver IC used in the device.

The Function (FN, pin 3 or pin 9) is the invert or non-invert select Pin, it is Internally held high.

Truth Table * Referenced to SG

FN (pin 3)

HIGH

IN (pin 4)

HIGH

MOSFET U1

HIGH

LOW

OFF

LOW

HIGH

OFF

LOW

Truth Table * Referenced to SG

FN (pin 9)

HIGH

IN (pin 10)

HIGH

MOSFET U2

HIGH

LOW

OFF

LOW

HIGH

OFF

LOW

Figure 2, DRF1301 Test Circuit

The test circuit illustrated in Figure 2 was used to evaluate the DRF1301 (available as an evaluation board DRF13XX/EVALSW.) The input

control signal is applied via IN and SG pins using RG188. This provides excellent noise immunity and control of the signal ground currents.

The +V_DDinputs (pins 2, 6, 8 and 12) should be heavily by-passed by 1uF capacitors as close to the pins as possible. The capacitors used

for this function must be capable of supporting the RMS currents and frequency of the gate load. A 50 Ohm (RL) load is used to evaluate the

output performance.

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583

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