Datasheet > 驱动程序和接口 > MOSFET 驱动器> DRF1202

DRF1202

更新时间： 2024-01-24 05:16:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		驱动器 MOSFET驱动器驱动程序和接口接口集成电路
页数	文件大小	规格书
4页	175K
描述
MOSFET Driver Hybrid

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技术参数
数据手册

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DRF1202 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	MODULE	包装说明：	,
针数：	10	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.78	高边驱动器：	NO
接口集成电路类型：	BUFFER OR INVERTER BASED MOSFET DRIVER	JESD-30 代码：	R-XDMA-F10
JESD-609代码：	e1	功能数量：	1
端子数量：	10	标称输出峰值电流：	8 A
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	最大供电电压：	18 V
最小供电电压：	8 V	标称供电电压：	15 V
表面贴装：	YES	端子面层：	TIN SILVER COPPER
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

DRF1202 数据手册

MOSFET Absolute Maximum Ratings

DRF1202

Symbol

BV_DSS

I_D

Parameter

Min

Typ

Max

Unit

Drain Source Voltage

500

Continuous Drain Current T_HS= 25°C

Drain-Source On State Resistance

R_DS(on)

0.25

Dynamic Characteristics

Symbol

Parameter

Min

Typ

2000

165

Max

Unit

C_iss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C_oss

C_rss

Thermal Characteristics

Symbol

Parameter

Ratings

0.10

Unit

°C/W

°C

Thermal Resistance Junction to Case

Thermal Resistance Junction to Heat Sink

Storage Temperature

0.27

JHS

T_JSTG

P_D

-55 to 150

1180

Maximum Power Dissipation @ T_SINK= 25°C

Total Power Dissipation @ T_C= 25°C

P_DC

3100

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

Figure 1, DRF1202 Simpliﬁed Circuit Diagram

The Simpliﬁed DRF1202 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), their contribution to

the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal

gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-

Ring Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. The IN pin is the input for the

control signal and is applied to a Schmitt Trigger. Both the FN and IN pins are referenced to Kelvin ground (SG.) The signal is then applied to

the intermediate drivers and level shifters; this section contains proprietary circuitry designed speciﬁcally for the ring abatement. The power

drivers provide high current to the gate of the MOSFETS.

123 4

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