Datasheet > DMP3017SFGQ

DMP3017SFGQ

更新时间： 2022-02-26 11:59:36

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	448K
描述
30V P-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMP3017SFGQ 数据手册

DMP3017SFGQ

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

T = 25C

-I = 1mA

-I = 250µA

1.2

1.0

0.3

0.6

0.9

1.2

1.5

-50 -25

75 100 125 150

T_A, AMBIENT TEMPERATURE (°C)

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

Figure 8 Diode Forward Voltage vs. Current

10000

= -15V

= -1.5A

iss

1000

oss

rss

f = 1MHz

100

10 15 20 25 30 35 40 45

Q_g, TOTAL GATE CHARGE (nC)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

Figure 10 Gate Charge

100

DS(on)

Limited

= 10s

= 1s

= 100ms

= 10ms

= 1ms

0.1

0.01

T_J(max)= 150°C

T_A= 25°C

V_GS= -10V

Single Pulse

= 100µs

DUT on 1 * MRP Board

0.01

100

0.1

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

5 of 8

www.diodes.com

September 2015

DMP3017SFGQ

Document number: DS38181 Rev. 1 - 2

1 2 3 456 7 8

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