Datasheet > DMBT4124

DMBT4124

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
DCCOM		晶体晶体管局域网
页数	文件大小	规格书
1页	228K
描述
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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DMBT4124 数据手册

DC COMPONENTS CO., LTD.

DMBT4124

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for general purpose switching and

amplifier applications.

SOT-23

.020(0.50)

.012(0.30)

Pinning

1 = Base

2 = Emitter

3 = Collector

.108(0.65)

.089(0.25)

.063(1.60)

.055(1.40)

Absolute Maximum Ratings(TA=25oC)

.045(1.15)

.034(0.85)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Rating

Unit

.091(2.30)

.067(1.70)

.118(3.00)

.110(2.80)

.0043(0.11)

.0035(0.09)

.051(1.30)

.035(0.90)

200

Total Power Dissipation

Junction Temperature

Storage Temperature

225

.026(0.65)

.010(0.25)

.004

(0.10)

.027(0.67)

.013(0.32)

Max

+150

-55 to +150

Dimensions in inches and (millimeters)

TSTG

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

Characteristic

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min

Typ

Max

Unit

Test Conditions

IC=10µA, IE=0

Collector-Base Breakdown Volatge

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Volatge

Collector Cutoff Current

IC=1mA, IB=0

IE=10µA, IC=0

VCB=20V

0.3

Emitter Cutoff Current

IEBO

VEB=3V

Collector-Emitter Saturation Voltage(1)

Base-Emitter Saturation Voltage(1)

DC Current Gain(1)

VCE(sat)

VBE(sat)

hFE1

IC=50mA, IB=5mA

IC=2mA, VCE=1V

IC=50mA, VCE=1V

0.95

120

300

360

hFE2

Transition Frequency

Output Capacitance

MHz

IC=10mA, VCE=20V, f=1MHz

VCB=5V, f=1MHz, IE=0

Cob

(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%

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